Issued Patents All Time
Showing 1–25 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12308615 | Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors | Morteza Monavarian, Saadat Mishkat-Ul-Masabih | 2025-05-20 |
| 12255265 | Devices comprising distributed bragg reflectors and methods of making the devices | Tito Busani, Mahmoud Behzadirad, Morteza Monavarian, Saadat Mishkat-Ul-Masabih | 2025-03-18 |
| 12078654 | Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips | Steven R. J. Brueck, John N. Randall, Tito Busani, Joshua B. Ballard, Mahmoud Behzadirad +1 more | 2024-09-03 |
| 11715635 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Morteza Monavarian, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew A. Allerman, Andrew M. Armstrong +1 more | 2023-08-01 |
| 11652188 | Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures | Morteza Monavarian, Behnam Abaie, Arash MAFI, Saadat Mishkat-Ul-Masabih | 2023-05-16 |
| 11456370 | Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-09-27 |
| 11374106 | Method of making heteroepitaxial structures and device formed by the method | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-06-28 |
| 11349011 | Method of making heteroepitaxial structures and device formed by the method | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-05-31 |
| 11342438 | Device with heteroepitaxial structure made using a growth mask | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-05-24 |
| 11342442 | Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-05-24 |
| 11342441 | Method of forming a seed area and growing a heteroepitaxial layer on the seed area | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2022-05-24 |
| 11177126 | Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching | Morteza Monavarian, Andrew Aragon, Saadat Mishkat-Ul-Masabih, Andrew A. Allerman, Andrew M. Armstrong +1 more | 2021-11-16 |
| 11002758 | Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips | Steven R. J. Brueck, John N. Randall, Tito Busani, Joshua B. Ballard, Mahmoud Behzadirad +1 more | 2021-05-11 |
| 10840092 | Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy | Tito Busani, Steven R. J. Brueck, Mahmoud Behzadirad | 2020-11-17 |
| RE47241 | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors | Mark P. D'Evelyn, Rajat Sharma, Eric M. Hall | 2019-02-12 |
| 10141418 | Device with heteroepitaxial structure made using a growth mask | Steven R. J. Brueck, Stephen D. Hersee, Seung-Chang Lee | 2018-11-27 |
| 10043946 | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening | Rafael Aldaz, Aurelien J. F. David, Thomas M. Katona, Rajat Sharma, Michael J. Cich | 2018-08-07 |
| 9773704 | Method for the reuse of gallium nitride epitaxial substrates | Casey O. Holder, Steven P. DenBaars, Shuji Nakamura | 2017-09-26 |
| 9722398 | Optical device structure using GaN substrates for laser applications | James W. Raring, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Elsass +1 more | 2017-08-01 |
| 9640947 | Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser | Casey O. Holder, Steven P. DenBaars, James S. Speck, Shuji Nakamura | 2017-05-02 |
| 9531164 | Optical device structure using GaN substrates for laser applications | James W. Raring, Nicholas J. Pfister, Rajat Sharma | 2016-12-27 |
| 9406843 | Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening | Rafael Aldaz, Aurelien J. F. David, Thomas M. Katona, Rajat Sharma | 2016-08-02 |
| 9396943 | Method for the reuse of gallium nitride epitaxial substrates | Casey O. Holder, Steven P. DenBaars, Shuji Nakamura | 2016-07-19 |
| 9257535 | Gate-all-around metal-oxide-semiconductor transistors with gate oxides | Seung-Chang Lee, Steven R. J. Brueck | 2016-02-09 |
| 9147733 | Method for the reuse of gallium nitride epitaxial substrates | Casey O. Holder, Steven P. DenBaars, Shuji Nakamura | 2015-09-29 |