Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8435849 | Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area | Xin Wang, Zhiqiang Wu | 2013-05-07 |
| 7407850 | N+ poly on high-k dielectric for semiconductor devices | Christoph Wasshuber, David B. Scott | 2008-08-05 |
| 7208379 | Pitch multiplication process | Christoph Wasshuber | 2007-04-24 |