| 5681768 |
Transistor having reduced hot carrier implantation |
Michael C. Smayling |
1997-10-28 |
| 5679968 |
Transistor having reduced hot carrier implantation |
Michael C. Smayling |
1997-10-21 |
| 5374580 |
Method of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region |
Robert Reid Doering, Gregory J. Armstrong |
1994-12-20 |
| 5170234 |
High density dynamic RAM with trench capacitor |
Robert Reid Doering, Gregory J. Armstrong |
1992-12-08 |
| 5049958 |
Stacked capacitors for VLSI semiconductor devices |
— |
1991-09-17 |
| 4975383 |
Method for making an electrically erasable programmable read only memory cell having a three dimensional floating gate |
— |
1990-12-04 |
| 4975384 |
Erasable electrically programmable read only memory cell using trench edge tunnelling |
— |
1990-12-04 |
| RE33261 |
Trench capacitor for high density dynamic RAM |
Ronald N. Parker |
1990-07-10 |
| 4928267 |
Method of reconditioning an electronically programmable memory device |
Ronald N. Parker |
1990-05-22 |
| 4891747 |
Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
— |
1990-01-02 |
| 4835741 |
Frasable electrically programmable read only memory cell using a three dimensional trench floating gate |
— |
1989-05-30 |
| 4830981 |
Trench capacitor process for high density dynamic ram |
Ronald N. Parker |
1989-05-16 |
| 4796228 |
Erasable electrically programmable read only memory cell using trench edge tunnelling |
— |
1989-01-03 |
| 4721987 |
Trench capacitor process for high density dynamic RAM |
Ronald N. Parker |
1988-01-26 |
| 4718041 |
EEPROM memory having extended life |
Michael C. Smayling |
1988-01-05 |
| 4641173 |
Integrated circuit load device |
Satwinder Malhi |
1987-02-03 |
| 4569117 |
Method of making integrated circuit with reduced narrow-width effect |
Michael C. Smayling, Michael Duane, Mamoru Itoh |
1986-02-11 |