Issued Patents All Time
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11640978 | Low-k feature formation processes and structures formed thereby | Chung-Chi Ko | 2023-05-02 |
| 11527653 | Semiconductor device and method of manufacture | Yu-Cheng Shiau, Chunyao Wang, Chih-Tang Peng, Yung-Cheng Lu, Chi On Chui | 2022-12-13 |
| 11469229 | Semiconductor device and method | Szu-Ping Lee, Che-Hao Chang, Chun-Heng Chen, Yung-Cheng Lu, Chi On Chui | 2022-10-11 |
| 11437492 | Semiconductor device and method of manufacture | Hung-Cheng Lin, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui | 2022-09-06 |
| 11393711 | Silicon oxide layer for oxidation resistance and method forming same | Chung-Chi Ko | 2022-07-19 |
| 11355339 | Forming nitrogen-containing layers as oxidation blocking layers | Chung-Chi Ko | 2022-06-07 |
| 11342177 | Treatment to control deposition rate | Kuang-Yuan Hsu | 2022-05-24 |
| 11329141 | Spacer structure with high plasma resistance for semiconductor devices | Chung-Chi Ko | 2022-05-10 |
| 11322412 | Forming nitrogen-containing low-K gate spacer | Chung-Chi Ko | 2022-05-03 |
| 11316034 | Post-formation mends of dielectric features | Hung-Cheng Lin, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui | 2022-04-26 |
| 11295948 | Low-K feature formation processes and structures formed thereby | Chung-Chi Ko, Li Chun Te, Hsiang-Wei Lin, Te-En Cheng, Wei-Ken Lin +2 more | 2022-04-05 |
| 11282749 | Forming nitrogen-containing low-k gate spacer | Chung-Chi Ko | 2022-03-22 |
| 11244823 | Varying temperature anneal for film and structures formed thereby | Shu Ling Liao, Chung-Chi Ko | 2022-02-08 |
| 11211243 | Method of filling gaps with carbon and nitrogen doped film | Chung-Chi Ko | 2021-12-28 |
| 11075123 | Method for forming isolation structure having improved gap-fill capability | Chung-Chi Ko, Wei LI | 2021-07-27 |
| 11069812 | Fin field-effect transistor device and method of forming the same | Chung-Chi Ko | 2021-07-20 |
| 10971589 | Low-k feature formation processes and structures formed thereby | Chung-Chi Ko | 2021-04-06 |
| 10950431 | Low-k feature formation processes and structures formed thereby | Chung-Chi Ko, Li Chun Te, Hsiang-Wei Lin, Te-En Cheng, Wei-Ken Lin +2 more | 2021-03-16 |
| 10943820 | Gap-fill method having improved gap-fill capability | Wei LI, Chung-Chi Ko, Yu-Cheng Shiau, Han-Sheng Weng, Chih-Tang Peng +1 more | 2021-03-09 |
| 10867789 | Treatment to control deposition rate | Kuang-Yuan Hsu | 2020-12-15 |
| 10867860 | Methods of forming FinFET device | Chung-Chi Ko | 2020-12-15 |
| 10804374 | Spacer structure with high plasma resistance for semiconductor devices | Chung-Chi Ko | 2020-10-13 |
| 10796898 | Treatment system and method | Kuang-Yuan Hsu, Tze-Liang Lee | 2020-10-06 |
| 10748760 | Varying temperature anneal for film and structures formed thereby | Shu Ling Liao, Chung-Chi Ko | 2020-08-18 |
| 10692773 | Forming nitrogen-containing low-K gate spacer | Chung-Chi Ko | 2020-06-23 |