TC

Tse-An Chen

TSMC: 21 patents #1,586 of 12,232Top 15%
NU National Taiwan University: 6 patents #102 of 2,195Top 5%
NU National Taiwan Normal University: 5 patents #10 of 236Top 5%
Overall (All Time): #199,296 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
12400860 Semiconductor device with two-dimensional materials Lain-Jong Li 2025-08-26
12237375 Semiconductor structure of stacked two-dimensional material layers Shin-Wei Shen, Tung Ying Lee, Lain-Jong Li 2025-02-25
12230680 Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer Chih-Piao Chuu 2025-02-18
12224334 Semiconductor device with gate dielectric formed using selective deposition Tung Ying Lee, Tzu-Chung Wang, Miin-Jang Chen, Yu-tung Yin, Meng-Chien YANG 2025-02-11
12211931 Fin field-effect transistor device with low-dimensional material and method Yi-Tse Hung, Chao-Ching Cheng, Hung-Li Chiang, Tzu-Chiang Chen, Lain-Jong Li 2025-01-28
12211930 Semiconductor device Lain-Jong Li, Wen-Hao Chang, Chien-Chih Tseng 2025-01-28
12191144 Semiconductor device and manufacturing method thereof Chun-Yi Chou, Po-Hsien Cheng, Miin-Jang Chen 2025-01-07
12151213 Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes Tzu-Ang Chao, Gregory Michael Pitner, Lain-Jong Li, Yu-Chao Lin 2024-11-26
12033850 Semiconductor device and manufacturing method thereof Chun-Yi Chou, Po-Hsien Cheng, Miin-Jang Chen 2024-07-09
11784225 Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers Shin-Wei Shen, Tung Ying Lee, Lain-Jong Li 2023-10-10
11749528 Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode Tzu-Ang Chao, Gregory Michael Pitner, Lain-Jong Li, Yu-Chao Lin 2023-09-05
11699739 Semiconductor device with gate dielectric formed using selective deposition Tung Ying Lee, Tzu-Chung Wang, Miin-Jang Chen, Yu-tung Yin, Meng-Chien YANG 2023-07-11
11688605 Semiconductor device with two-dimensional materials Lain-Jong Li 2023-06-27
11508572 Semiconductor device and manufacturing method thereof Chun-Yi Chou, Po-Hsien Cheng, Miin-Jang Chen 2022-11-22
11476356 Fin field-effect transistor device with low-dimensional material and method Yi-Tse Hung, Chao-Ching Cheng, Hung-Li Chiang, Tzu-Chiang Chen, Lain-Jong Li 2022-10-18
11342181 Semiconductor devices and methods of manufacture Tzu-Ang Chao, Gregory Michael Pitner, Lain-Jong Li, Yu-Chao Lin 2022-05-24
11289582 Single-crystal hexagonal boron nitride layer and method forming same Chih-Piao Chuu, Lain-Jong Li, Wen-Hao Chang, ChienChih Tseng, Chao-Kai Wen 2022-03-29
11244866 Low dimensional material device and method Yi-Tse Hung, Chao-Ching Cheng, Hung-Li Chiang, Lain-Jong Li, Tzu-Chiang Chen 2022-02-08
11245024 Semiconductor device and manufacturing method thereof Tung Ying Lee, Tzu-Chung Wang, Miin-Jang Chen, Yu-tung Yin, Meng-Chien YANG 2022-02-08
11158807 Field effect transistor and method of manufacturing the same Timothy Vasen, Chao-Ching Cheng, Matthias Passlack, Martin Christopher Holland, Lain-Jong Li 2021-10-26
11094811 Semiconductor device and manufacturing method thereof Lain-Jong Li, Wen-Hao Chang, Chien-Chih Tseng 2021-08-17