Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11664218 | Semiconductor device and method | Sheng-Ting Fan, Chee-Wee Liu, Chi-Wen Liu | 2023-05-30 |
| 11374115 | Method for forming semiconductor device having boron-doped germanium tin epitaxy structure | Chung-En TSAI, Fang-Liang Lu, Chee-Wee Liu | 2022-06-28 |
| 11043376 | Semiconductor device and method | Sheng-Ting Fan, Chee-Wee Liu, Chi-Wen Liu | 2021-06-22 |
| 11018239 | Semiconductor device and manufacturing method thereof | Sheng-Ting Fan, Chee-Wee Liu | 2021-05-25 |
| 10879404 | Multi-channel field effect transistors using 2D-material | Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan | 2020-12-29 |
| 10777663 | Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same | Chung-En TSAI, Fang-Liang Lu, Chee-Wee Liu | 2020-09-15 |
| 10636651 | Semiconductor device and method | Sheng-Ting Fan, Chee-Wee Liu, Chi-Wen Liu | 2020-04-28 |
| 10290708 | Field effect transistors and methods of forming same | Samuel C. Pan, Chee-Wee Liu, Sheng-Ting Fan | 2019-05-14 |
| 10269981 | Multi-channel field effect transistors using 2D-material | Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan | 2019-04-23 |
| 10109477 | Semiconductor device and method | Sheng-Ting Fan, Chee-Wee Liu, Chi-Wen Liu | 2018-10-23 |
| 9679961 | Transistor with wurtzite channel | Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan | 2017-06-13 |
| 9660056 | 3D UTB transistor using 2D-material channels | Hung-Chih Chang, Chee-Wee Liu | 2017-05-23 |
| 9559168 | Field effect transistors and methods of forming same | Der-Chuan Lai, Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan | 2017-01-31 |
| 9490430 | Field effect transistors and methods of forming same | Samuel C. Pan, Chee-Wee Liu, Sheng-Ting Fan | 2016-11-08 |
| 9425250 | Transistor with wurtzite channel | Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan | 2016-08-23 |
| 9240478 | 3D UTB transistor using 2D material channels | Hung-Chih Chang, Chee-Wee Liu | 2016-01-19 |