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Ming-Shu Yen

TSMC: 1 patents #8,466 of 12,232Top 70%
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Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
6040223 Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits Meng-Chang Liu, Jyh-Feng Lin, Su-Ying Su, Fu-Ying Chiu, Chien-Hung Lin 2000-03-21