HT

Horng-Huei Tseng

TSMC: 212 patents #66 of 12,232Top 1%
VS Vanguard International Semiconductor: 179 patents #1 of 585Top 1%
IT ITRI: 16 patents #195 of 9,619Top 3%
Overall (All Time): #579 of 4,157,543Top 1%
414
Patents All Time

Issued Patents All Time

Showing 351–375 of 414 patents

Patent #TitleCo-InventorsDate
5748478 Output management of processing in a manufacturing plant Yirn-Sheng Pan 1998-05-05
5744387 Method for fabricating dynamic random access memory with a flat topography and fewer photomasks 1998-04-28
5741741 Method for making planar metal interconnections and metal plugs on semiconductor substrates 1998-04-21
5736459 Method to fabricate a polysilicon stud using an oxygen ion implantation procedure 1998-04-07
5733808 Method for fabricating a cylindrical capacitor for a semiconductor device 1998-03-31
5731130 Method for fabricating stacked capacitors on dynamic random access memory cells 1998-03-24
5728618 Method to fabricate large capacitance capacitor in a semiconductor circuit 1998-03-17
5728617 Method for fabricating vertical walled stacked capacitors for dram cells 1998-03-17
5728614 Method to improve the topography of a field oxide region 1998-03-17
5716883 Method of making increased surface area, storage node electrode, with narrow spaces between polysilicon columns 1998-02-10
5716882 Method for forming a DRAM capacitor by forming a trench in a polysilicon layer 1998-02-10
5710074 Increased surface area of an STC structure via the use of a storage node electrode comprised of polysilicon mesas and polysilicon sidewall spacers 1998-01-20
5710078 Method to improve the contact resistance of bit line metal structures to underlying polycide structures 1998-01-20
5710075 Method to increase surface area of a storage node electrode, of an STC structure, for DRAM devices 1998-01-20
5705417 Method for forming self-aligned silicide structure 1998-01-06
5705438 Method for manufacturing stacked dynamic random access memories using reduced photoresist masking steps 1998-01-06
5702967 Method of fabricating a deep submicron MOSFET device using a recessed, narrow polysilicon gate structure 1997-12-30
5696395 Dynamic random access memory with fin-type stacked capacitor 1997-12-09
5693562 Method for forming a barrier metal film with conformal step coverage in a semiconductor integrated circuit 1997-12-02
5688706 Method for fabricating a MOSFET device, with local channel doping, self aligned to a selectively deposited tungsten gate 1997-11-18
5681773 Method for forming a DRAM capacitor 1997-10-28
5681774 Method of fabricating a toothed-shape capacitor node using a thin oxide as a mask 1997-10-28
5677218 Method of fabricating FET device with narrow gate length 1997-10-14
5677217 Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate 1997-10-14
5677216 Method of manufacturing a floating gate with high gate coupling ratio 1997-10-14