HT

Horng-Huei Tseng

TSMC: 212 patents #66 of 12,232Top 1%
VS Vanguard International Semiconductor: 179 patents #1 of 585Top 1%
IT ITRI: 16 patents #195 of 9,619Top 3%
Overall (All Time): #579 of 4,157,543Top 1%
414
Patents All Time

Issued Patents All Time

Showing 326–350 of 414 patents

Patent #TitleCo-InventorsDate
5821151 Method of making a capacitor via chemical mechanical polish 1998-10-13
5821139 Method for manufacturing a DRAM with increased electrode surface area 1998-10-13
5817554 Use of a grated top surface topography for capacitor structures 1998-10-06
5814526 Method of forming a DRAM stacked capacitor with a two step ladder storage node 1998-09-29
5811339 Method of fabricating deep submicron MOSFET with narrow gate length using thermal oxidation of polysilicon 1998-09-22
5807775 Method for forming a double walled cylindrical capacitor for a DRAM 1998-09-15
5804481 Increased capacitor surface area via use of an oxide formation and removal procedure 1998-09-08
5804480 method for forming a DRAM capacitor using HSG-Si technique and oxygen implant Chih-Yuan Lu 1998-09-08
5801082 Method for making improved shallow trench isolation with dielectric studs for semiconductor integrated circuits 1998-09-01
5795806 Method to increase the area of a stacked capacitor structure by creating a grated top surface bottom electrode 1998-08-18
5795822 Method for manufacturing an aligned opening in an integrated circuit 1998-08-18
5792693 Method for producing capacitors having increased surface area for dynamic random access memory 1998-08-11
5792688 Method to increase the surface area of a storage node electrode, of an STC structure, for DRAM devices, via formation of polysilicon columns 1998-08-11
5793077 DRAM trench capacitor with recessed pillar 1998-08-11
5783486 Bridge-free self aligned silicide process 1998-07-21
5783490 Photolithography alignment mark and manufacturing method 1998-07-21
5766994 Dynamic random access memory fabrication method having stacked capacitors with increased capacitance 1998-06-16
5766993 Method of fabricating storage node electrode, for DRAM devices, using polymer spacers, to obtain polysilicon columns, with minimum spacing between columns 1998-06-16
5766998 Method for fabricating narrow channel field effect transistors having titanium shallow junctions 1998-06-16
5763304 Method for manufacturing a capacitor with chemical mechanical polishing 1998-06-09
5759895 Method of fabricating a capacitor storage node having a rugged-fin surface 1998-06-02
5759891 Increased surface area capacitor via use of a novel reactive ion etch procedure 1998-06-02
5759894 Method for forming a DRAM capacitor using HSG-Si Chih-Yuan Lu 1998-06-02
5756384 Method of fabricating an EPROM cell with a high coupling ratio 1998-05-26
5753557 Bridge-free self aligned silicide process 1998-05-19