MT

Masami Tatsumi

Sumitomo Electric Industries: 29 patents #524 of 21,551Top 3%
AT Agency Of Industrial Science And Technology: 1 patents #568 of 1,778Top 35%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
Overall (All Time): #125,810 of 4,157,543Top 4%
30
Patents All Time

Issued Patents All Time

Showing 1–25 of 30 patents

Patent #TitleCo-InventorsDate
RE42279 Method of preparing a compound semiconductor crystal Tomohiro Kawase, Shinichi Sawada 2011-04-12
RE41551 Method of preparing group III-V compound semiconductor crystal Tomohiro Kawase 2010-08-24
RE40662 Method of preparing a compound semiconductor crystal Tomohiro Kawase, Shinichi Sawada 2009-03-17
7468529 Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particles Chihiro Kawai 2008-12-23
RE39778 Method of preparing group III-V compound semiconductor crystal Tomohiro Kawase 2007-08-21
6866714 Large size semiconductor crystal with low dislocation density Tomohiro Kawase, Katsushi Hashio, Shin-ichi Sawada 2005-03-15
6780244 Method for producing a semiconductor crystal Tomohiro Kawase, Katsushi Hashio, Shin-ichi Sawada 2004-08-24
6572700 Semiconductor crystal, and method and apparatus of production thereof Tomohiro Kawase, Katsushi Hashio, Shin-ichi Sawada 2003-06-03
6485563 Method of preparing a compound semiconductor crystal Tomohiro Kawase, Shinichi Sawada 2002-11-26
6475277 Group III-V nitride semiconductor growth method and vapor phase growth apparatus Ryu Hirota 2002-11-05
6273947 Method of preparing a compound semiconductor crystal Tomohiro Kawase, Shinichi Sawada 2001-08-14
6254677 Semiconductor crystal, and method and apparatus of production thereof Katsushi Hashio, Shin-ichi Sawada 2001-07-03
6136093 Method of making GaN single crystal and apparatus for making GaN single crystal Hiromu Shiomi, Shigehiro Nishino 2000-10-24
6007622 Method of preparing group III-V compound semiconductor crystal Tomohiro Kawase 1999-12-28
5951758 Method and apparatus for the growth of a single crystal Katsushi Hashio, Shin-ichi Sawada 1999-09-14
5830269 Method of preparing group II-VI or III-V compound single crystal Tomohiro Kawase, Yoshihiro Wakayama 1998-11-03
5733371 Apparatus for growing a single crystal Katsushi Hashio, Shin-ichi Sawada 1998-03-31
5429067 Czochralski method using a member for intercepting radiation from a raw material molten solution Shin-ichi Sawada 1995-07-04
5292487 Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor Shin-ichi Sawada 1994-03-08
5290395 Method of and apparatus for preparing single crystal Kazuhisa Matsumoto, Tomohiro Kawase 1994-03-01
5256381 Apparatus for growing single crystals of III-V compound semiconductors Koji Tada 1993-10-26
5145550 Process and apparatus for growing single crystals of III-V compound semiconductor Koji Tada 1992-09-08
4994437 Method of manufacturing oxide superconducting films by peritectic reaction Yasuko Torii, Yasuo Namikawa 1991-02-19
4678534 Method for growing a single crystal Koji Tada, Toshihiro Kotani, Shinichi Sawada 1987-07-07
4634490 Method of monitoring single crystal during growth Shin-ichi Sawada, Ryusuke Nakai 1987-01-06