MK

Makoto Kitabatake

Sumitomo Electric Industries: 46 patents #193 of 21,551Top 1%
PA Panasonic: 24 patents #737 of 21,108Top 4%
MC Matushita Electric Industrial Co.: 1 patents #3 of 106Top 3%
RJ Research Development Corporation Of Japan: 1 patents #170 of 402Top 45%
MC Matsushit Electric Industrial Co.: 1 patents #13 of 293Top 5%
TC Toyo Tanso Co.: 1 patents #72 of 192Top 40%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
Overall (All Time): #26,370 of 4,157,543Top 1%
74
Patents All Time

Issued Patents All Time

Showing 51–74 of 74 patents

Patent #TitleCo-InventorsDate
6577386 Method and apparatus for activating semiconductor impurities Akihisa Yoshida, Masatoshi Kitagawa, Masao Uchida, Tsuneo Mitsuyu 2003-06-10
6504176 Field effect transistor and method of manufacturing the same Toshiya Yokogawa, Osamu Kusumoto, Masao Uchida, Kunimasa Takahashi 2003-01-07
6445114 Electron emitting device and method of manufacturing the same Hideo Kurokawa, Tetsuya Shiratori, Toshifumi Sato, Masahiro Deguchi 2002-09-03
6400091 Electron emission element and image output device Masahiro Deguchi, Kanji Imai, Tomohiro Sekiguchi, Hideo Kurokawa, Keisuke Koga +2 more 2002-06-04
6350999 Electron-emitting device Takeshi Uenoyama, Takao Tohda, Masahiro Deguchi, Kentaro Setsune 2002-02-26
6323053 Growth of GaN on Si substrate using GaSe buffer layer Takashi Nishikawa, Yoichi Sasai 2001-11-27
6306211 Method for growing semiconductor film and method for fabricating semiconductor device Kunimasa Takahashi, Masao Uchida, Toshiya Yokogawa 2001-10-23
6273950 SiC device and method for manufacturing the same 2001-08-14
6274889 Method for forming ohmic electrode, and semiconductor device Yorito Ota, Hiroyuki Masato, Yasuhito Kumabuchi 2001-08-14
6270573 Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate Masao Uchida, Kunimasa Takahashi 2001-08-07
6255201 Method and device for activating semiconductor impurities Akihisa Yoshida, Masatoshi Kitagawa, Masao Uchida, Tsuneo Mitsuyu 2001-07-03
6228720 Method for making insulated-gate semiconductor element Masao Uchida, Kunimasa Takahashi, Takeshi Uenoyama 2001-05-08
6214107 Method for manufacturing a SiC device 2001-04-10
6207282 Substrate surface treatment method Masahiro Deguchi, Akihisa Yoshida, Takashi Hirao 2001-03-27
6110813 Method for forming an ohmic electrode Yorito Ota, Hiroyuki Masato, Yasuhito Kumabuchi 2000-08-29
6083354 Treatment method for diamonds Masahiro Deguchi, Takashi Hirao 2000-07-04
6068883 Process for forming diamond films by nucleation Masahiro Deguchi, Hideo Kurokawa, Tetsuya Shiratori 2000-05-30
6008502 Diamond electron emitting device having an insulative electron supply layer Masahiro Deguchi, Akio Hiraki, Toshimichi Ito, Akimitsu Hatta, Nobuhiro Eimori 1999-12-28
5814194 Substrate surface treatment method Masahiro Deguchi, Akihisa Yoshida, Takashi Hirao 1998-09-29
5605860 Method of fabricating semiconductor thin film and method of fabrication Hall-effect device Tetuo Kawasaki, Tetuhiro Koretika, Takasi Hirao 1997-02-25
5328855 Formation of semiconductor diamond Masahiro Deguchi, Takashi Hirao 1994-07-12
4877677 Wear-protected device Kumiko Hirochi, Osamu Yamazaki 1989-10-31
4844785 Method for deposition of hard carbon film Kiyotaka Wasa 1989-07-04
4796982 Optical valve Kentaro Setsune, Kiyotaka Wasa 1989-01-10