Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9023720 | Manufacturing method of semiconductor device | Michiro Sugitani | 2015-05-05 |
| 8163635 | Manufacturing method of semiconductor device | Michiro Sugitani | 2012-04-24 |
| RE37228 | Method of fabricating semiconductor device | Takashi Ohzone | 2001-06-12 |
| 5476006 | Crystal evaluation apparatus and crystal evaluation method | Shingi Fujii, Morio Inoue | 1995-12-19 |
| 5466612 | Method of manufacturing a solid-state image pickup device | Katuya Ishikawa | 1995-11-14 |
| 5270226 | Manufacturing method for LDDFETS using oblique ion implantion technique | Takashi Hori, Toshiki Yabu, Kazumi Kurimoto | 1993-12-14 |
| 5270227 | Method for fabrication of semiconductor device utilizing ion implantation to eliminate defects | Shuichi Kameyama | 1993-12-14 |
| 5223445 | Large angle ion implantation method | — | 1993-06-29 |
| 5057444 | Method of fabricating semiconductor device | Takashi Ohzone | 1991-10-15 |
| 5049518 | Method of making a trench dram cell | — | 1991-09-17 |
| 5026658 | Method of making a trench capacitor dram cell | Toshio Yamada, Shinji Odanaka, Masaki Fukumoto | 1991-06-25 |
| 5013673 | Implantation method for uniform trench sidewall doping by scanning velocity correction | — | 1991-05-07 |
| 4920390 | Semiconductor memory device and method of fabricating the same | Toshio Yamada, Shinji Odanaka, Masaki Fukumoto | 1990-04-24 |
| 4918027 | Method of fabricating semiconductor device | Takashi Ohzone | 1990-04-17 |
| 4861729 | Method of doping impurities into sidewall of trench by use of plasma source | Takashi Hirao, Takashi Ohzone | 1989-08-29 |
| 4764483 | Method for burying a step in a semiconductor substrate | Kenji Tateiwa, Ichiro Nakao, Hideaki Shimoda | 1988-08-16 |
| 4487635 | Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam | Koichi Kugimiya, Shigenobu Akiyama | 1984-12-11 |