Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11634833 | Production method of monocrystalline silicon based on an emissivity of a production apparatus | Toshirou Kotooka, Yuuji Tsutsumi | 2023-04-25 |
| 10294583 | Producing method and apparatus of silicon single crystal, and silicon single crystal ingot | Yasuhito Narushima, Fukuo Ogawa, Masahiro Irokawa, Toshimichi Kubota | 2019-05-21 |
| 10233564 | Manufacturing method of monocrystalline silicon and monocrystalline silicon | Yasuhito Narushima, Fukuo Ogawa | 2019-03-19 |
| 9212431 | Silicon single crystal pulling device and graphite member used therein | Fukuo Ogawa, Yasuhito Narushima, Tsuneaki Tomonaga, Toshimichi Kubota | 2015-12-15 |
| 9074298 | Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot | Toshimichi Kubota, Fukuo Ogawa, Yasuhito Narushima | 2015-07-07 |
| 8961686 | Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up device | Fukuo Ogawa, Yasuhito Narushima, Toshimichi Kubota | 2015-02-24 |
| 8920561 | Silicon single crystal pull-up apparatus that pulls a doped silicon single crystal from a melt | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota, Tomohiro Fukuda | 2014-12-30 |
| 8852340 | Method for manufacturing single crystal | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota | 2014-10-07 |
| 8747551 | Process for production of silicon single crystal, and highly doped N-type semiconductor substrate | Yasuhito Narushima, Toshimichi Kubota, Fukuo Ogawa | 2014-06-10 |
| 8715416 | Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota | 2014-05-06 |
| 8580032 | Method for manufacturing single crystal | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota | 2013-11-12 |
| 8574363 | Process for production of silicon single crystal, and highly doped N-type semiconductor substrate | Yasuhito Narushima, Toshimichi Kubota, Fukuo Ogawa | 2013-11-05 |
| 8535439 | Manufacturing method for silicon single crystal | Yasuhito Narushima, Toshimichi Kubota, Fukuo Ogawa, Tomohiro Fukuda | 2013-09-17 |
| 8518180 | Silicon single crystal pull-up apparatus having a sliding sample tube | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota, Tomohiro Fukuda | 2013-08-27 |
| 8409347 | Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device | Yasuhito Narushima, Toshimichi Kubota | 2013-04-02 |
| 8283241 | Dopant implanting method and doping apparatus | Yasuhito Narushima, Fukuo Ogawa, Toshimichi Kubota | 2012-10-09 |
| 8187383 | Semiconductor single crystal manufacturing device and manufacturing method | Toshimichi Kubota, Eiichi Kawasaki, Tsuneaki Tomonaga | 2012-05-29 |
| 8110042 | Method for manufacturing single crystal | Yasuhito Narushima, Fukuo Ogawa, Tsuneaki Tomonaga, Yasuyuki Ohta, Toshimichi Kubota +1 more | 2012-02-07 |
| 8043428 | Process for production of silicon single crystal | Toshimichi Kubota, Yasuhito Narushima, Fukuo Ogawa | 2011-10-25 |