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Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
PC

Pierre Caubet — 16 Patents

SSStmicroelectronics Sa: 10 patents #598 of 4,662Top 15%
SSStmicroelectronics (Crolles 2) Sas: 7 patents #59 of 529Top 15%
Le Versoud, FR: #3 of 39 inventorsTop 8%
Overall (All Time): #284,196 of 4,157,543Top 7%
16 Patents All Time
Pierre Caubet has been granted 16 US patents while listed as an inventor at Stmicroelectronics Sa. The first was granted in 2009 and the most recent in February 2019. Pierre Caubet ranks #284,196 of 4,157,543 US inventors in our database (top 6.8%). Patent records list Pierre Caubet in Le Versoud, FR.

Patents per Year

Patents granted per year, 2009 to 2019Bar chart with a peak of 3 patents in 2010.peak 32009: 2 patents20092010: 3 patents20102011: 3 patents20112015: 2 patents20152016: 2 patents20162017: 2 patents20172018: 1 patents20182019: 1 patents2019

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
10211059 Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride Florian Domengie, Carlos Augusto SUAREZ SEGOVIA, Aurelie Bajolet, Onintza Ros Bengoechea 2019-02-19 $5,429,000
9953837 Transistor having a gate comprising a titanium nitride layer and method for depositing this layer Sylvain Baudot 2018-04-24 $10,132,000
9691871 Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride Florian Domengie, Carlos Augusto SUAREZ SEGOVIA, Aurelie Bajolet, Onintza Ros Bengoechea 2017-06-27 $8,456,000
9536599 Optoelectronic device, in particular memory device Mickael Gros-Jean 2017-01-03
9530489 Optoelectronic device, in particular memory device Mickael Gros-Jean 2016-12-27 $4,321,000
9257518 Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit Sylvain Baudot, Florian Domengie 2016-02-09
9029254 Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer Florian Domengie, Sylvain Baudot 2015-05-12 $5,637,000
9000596 Transistors having a gate comprising a titanium nitride layer Sylvain Baudot 2015-04-07 $1,848,000
8053871 Implementation of a metal barrier in an integrated electronic circuit Laurin Dumas, Cécile Jenny 2011-11-08 $2,524,000
8018062 Production of a self-aligned CuSiN barrier Nicolas Casanova 2011-09-13 $6,592,000
8013284 Integrated electrooptic system Michael Gros-Jean 2011-09-06 $3,601,000
7851915 Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same Rym Benaboud 2010-12-14 $5,892,000
7687399 Production of a self-aligned CuSiN barrier Nicolas Casanova 2010-03-30 $3,705,000
7667173 Integrated electrooptic system Michael Gros-Jean 2010-02-23 $5,176,000
7601636 Implementation of a metal barrier in an integrated electronic circuit Laurin Dumas, Cécile Jenny 2009-10-13 $5,106,000
7531447 Process for forming integrated circuit comprising copper lines Magali GREGOIRE 2009-05-12 $6,234,000