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Home › Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride

Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride

US Patent 10211059 · Granted Feb 19, 2019

Estimated economic value: $5,429,000 ⓘ

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