| 11469136 |
Semiconductor structure with partially embedded insulation region and related method |
Simone Dario MARIANI, Fabrizio Fausto Renzo Toia, Davide Giuseppe Patti, Marco Morelli, Giuseppe Barillaro |
2022-10-11 |
| 11282954 |
LDMOS device with integrated P-N junction diodes |
Michele BASSO, Stefano Corona, Leonardo DI BICCARI |
2022-03-22 |
| 10825954 |
Porous-silicon light-emitting device and manufacturing method thereof |
Marco Morelli, Fabrizio Fausto Renzo Toia, Giuseppe Barillaro |
2020-11-03 |
| 10796942 |
Semiconductor structure with partially embedded insulation region |
Simone Dario MARIANI, Fabrizio Fausto Renzo Toia, Davide Giuseppe Patti, Marco Morelli, Giuseppe Barillaro |
2020-10-06 |
| 10535767 |
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process |
Fabrizio Fausto Renzo Toia, Marco Marchesi, Marco Morelli, Riccardo Depetro, Giuseppe Barillaro +1 more |
2020-01-14 |
| 10236378 |
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process |
Fabrizio Fausto Renzo Toia, Marco Marchesi, Marco Morelli, Riccardo Depetro, Giuseppe Barillaro +1 more |
2019-03-19 |
| 10002990 |
Porous-silicon light-emitting device and manufacturing method thereof |
Marco Morelli, Fabrizio Fausto Renzo Toia, Giuseppe Barillaro |
2018-06-19 |
| 9911869 |
Diode with reduced recovery time for applications subject to the current recirculation phenomenon and/or to fast voltage variations |
Dario Ripamonti, Davide Ugo Ghisu, Dario Bianchi |
2018-03-06 |