CR

Crocifisso Marco Antonio Renna

SS Stmicroelectronics Sa: 12 patents #340 of 4,662Top 8%
BS Biomérieux, S.A.: 1 patents #68 of 177Top 40%
Overall (All Time): #401,409 of 4,157,543Top 10%
12
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11894432 Back side contact structure for a semiconductor device and corresponding manufacturing process Antonio LANDI, Brunella CAFRA 2024-02-06
11837558 Process for manufacturing a strained semiconductor device and corresponding strained semiconductor device Santo Alessandro Smerzi, Michele Calabretta, Alessandro Sitta, Giuseppe D'Arrigo 2023-12-05
11756916 Method for the manufacture of integrated devices including a die fixed to a leadframe Michele Calabretta, Sebastiano Russo, Marco Alfio Torrisi 2023-09-12
11482503 Method for the manufacture of integrated devices including a die fixed to a leadframe Michele Calabretta, Sebastiano Russo, Marco Alfio Torrisi 2022-10-25
11075172 Process for manufacturing a strained semiconductor device and corresponding strained semiconductor device Santo Alessandro Smerzi, Michele Calabretta, Alessandro Sitta, Giuseppe D'Arrigo 2021-07-27
9777317 Microfluidic PCR device Giuseppe Spoto, Luigi Occhipinti, Cristian DALL'OGLIO, Laurent Drazek 2017-10-03
9190539 Vertical conductive connections in semiconductor substrates 2015-11-17
9018730 Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device Antonino Scuderi, Carlo Magro, Nunzio Spina, Egidio Ragonese, Barbaro Marano +1 more 2015-04-28
8970006 Vertical conductive connections in semiconductor substrates 2015-03-03
8101448 Manufacturing method of a gas sensor integrated on a semiconductor substrate Alessandro Auditore, Alessio Romano, Sebastiano Ravesi 2012-01-24
7585743 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method Luigi La Magna, Simona Lorenti, Salvatore Coffa 2009-09-08
7193256 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method Luigi La Magna, Simona Lorenti, Salvatore Coffa 2007-03-20