Issued Patents All Time
Showing 101–115 of 115 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9166372 | Gallium nitride containing laser device configured on a patterned substrate | James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt | 2015-10-20 |
| 9166373 | Laser devices having a gallium and nitrogen containing semipolar surface orientation | James W. Raring, Mathew C. Schmidt, Bryan Ellis, Hua Huang, Christiane Poblenz Elsass | 2015-10-20 |
| 9117944 | Semiconductor light emitting devices grown on composite substrates | Michael R. Krames | 2015-08-25 |
| 9020003 | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates | James W. Raring | 2015-04-28 |
| 8971368 | Laser devices having a gallium and nitrogen containing semipolar surface orientation | James W. Raring, Mathew C. Schmidt, Bryan Ellis, Hua Huang, Christiane Poblenz | 2015-03-03 |
| 8964807 | Magnesium based gettering regions for gallium and nitrogen containing laser diode devices | James W. Raring, Christiane Elsass | 2015-02-24 |
| 8492244 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan Gardner | 2013-07-23 |
| 8481408 | Relaxation of strained layers | Fabrice Letertre, Carlos Mazure, Michael R. Krames, Nathan Gardner | 2013-07-09 |
| 8334543 | III-V light emitting device including a light extracting structure | Aurelien J. F. David, Michael R. Krames | 2012-12-18 |
| 8203153 | III-V light emitting device including a light extracting structure | Aurelien J. F. David, Michael R. Krames | 2012-06-19 |
| 8106403 | III-nitride light emitting device incorporation boron | — | 2012-01-31 |
| 8105852 | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate | Nathan Gardner, Michael R. Krames, Sungsoo Yi | 2012-01-31 |
| 7981767 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan Gardner | 2011-07-19 |
| 7956360 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Steven P. DenBaars, James S. Speck, Shuji Nakamura | 2011-06-07 |
| 7208393 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Steven P. DenBaars, James S. Speck, Shuji Nakamura | 2007-04-24 |