HM

Hiroyuki Miwa

SO Sony: 35 patents #893 of 25,231Top 4%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
Overall (All Time): #91,004 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 1–25 of 37 patents

Patent #TitleCo-InventorsDate
6808999 Method of making a bipolar transistor having a reduced base transit time 2004-10-26
6548873 Semiconductor device and manufacturing method of the same Hiroaki Ammo, Shigeru Kanematsu 2003-04-15
6344384 Method of production of semiconductor device Chihiro Arai 2002-02-05
6323075 Method of fabricating semiconductor device Hiroaki Ammo 2001-11-27
6265276 Structure and fabrication of bipolar transistor 2001-07-24
6159784 Method of producing semiconductor device Hiroaki Ammo 2000-12-12
6136634 Method of manufacturing semiconductor resistors Katsuyuki Kato, Hiroaki Ammo 2000-10-24
6043554 Bipolar transistor and its manufacturing method 2000-03-28
6043552 Semiconductor device and method of manufacturing the semiconductor device 2000-03-28
6005284 Semiconductor device and its manufacturing method Hirokazu Ejiri, Hiroaki Ammo 1999-12-21
5955775 Structure of complementary bipolar transistors 1999-09-21
5872381 Semiconductor device and its manufacturing method Katsuyuki Kato, Hiroaki Ammo 1999-02-16
5856228 Manufacturing method for making bipolar device having double polysilicon structure Shigeru Kanematsu, Takayuki Gomi, Hiroaki Anmo, Takashi Noguchi, Katsuyuki Kato +2 more 1999-01-05
5824589 Method for forming bipolar transistor having a reduced base transit time 1998-10-20
5786258 Method of making an SOI transistor Takayuki Gomi, Katsuyuki Kato 1998-07-28
5783472 Method of making an SOI transistor Takayuki Gomi, Katsuyuki Kato 1998-07-21
5686032 Process of forming a gasket directly on workpiece, using a mold clamped to the workpiece Tatsuya Mizobe, Masayuki Sumiyoshi 1997-11-11
5666001 Transistor wherein the base area is covered with an insulating layer which is overlaid with a conductive film that might be polysilicon crystal or aluminum 1997-09-09
5643806 Manufacturing method for making bipolar device Shigeru Kanematsu, Takayuki Gomi, Hiroaki Anmo, Takashi Noguchi, Katsuyuki Kato +2 more 1997-07-01
5641692 Method for producing a Bi-MOS device Hiroaki Anmo 1997-06-24
5629219 Method for making a complementary bipolar transistor 1997-05-13
5629217 Method and apparatus for SOI transistor Takayuki Gomi, Katsuyuki Kato 1997-05-13
5622887 Process for fabricating BiCMOS devices including passive devices Mamoru Shinohara, Takayuki Gomi, Tomotaka Fujisawa 1997-04-22
5583065 Method of making a MOS semiconductor device 1996-12-10
5580797 Method of making SOI Transistor Takayuki Gomi, Katsuyuki Kato 1996-12-03