YO

Yoshi Ono

SA Sharp Laboratories Of America: 72 patents #13 of 419Top 4%
Sharp Kabushiki Kaisha: 1 patents #6,861 of 10,731Top 65%
📍 Camas, WA: #8 of 330 inventorsTop 3%
🗺 Washington: #518 of 76,902 inventorsTop 1%
Overall (All Time): #26,562 of 4,157,543Top 1%
74
Patents All Time

Issued Patents All Time

Showing 51–74 of 74 patents

Patent #TitleCo-InventorsDate
6686212 Method to deposit a stacked high-&kgr; gate dielectric for CMOS applications John F. Conley, Jr., Rajendra Solanki 2004-02-03
6632731 Structure and method of making a sub-micron MOS transistor Yanjun Ma, David R. Evans, Sheng Teng Hsu 2003-10-14
6627503 Method of forming a multilayer dielectric stack Yanjun Ma 2003-09-30
6616857 C-axis oriented lead germanate film Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2003-09-09
6590243 Ferroelastic lead germanate thin film and deposition method Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2003-07-08
6573134 Dual metal gate CMOS devices and method for making the same Yanjun Ma, David R. Evans, Sheng Teng Hsu 2003-06-03
6551947 Method of forming a high quality gate oxide at low temperatures Jong-Jan Lee 2003-04-22
6534871 Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same Jer-Shen Maa, Douglas J. Tweet, Fengyan Zhang, Sheng Teng Hsu 2003-03-18
6495378 Ferroelastic lead germanate thin film and deposition method Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2002-12-17
6483137 Capacitor utilizing c-axis oriented lead germanate film Tingkai Li, Fengyan Zhang, Sheng Tang Hsu 2002-11-19
6468901 Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same Jer-Shen Maa, Fengyan Zhang 2002-10-22
6440752 Electrode materials with improved hydrogen degradation resistance and fabrication method Fengyan Zhang, Tingkai Li, Hong Ying, Sheng Teng Hsu 2002-08-27
6420279 Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate Wei-Wei Zhuang, Rajendra Solanki 2002-07-16
6410343 C-axis oriented lead germanate film and deposition method Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2002-06-25
6410346 Method of forming ferroelastic lead germanate thin films Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2002-06-25
6407435 Multilayer dielectric stack and method Yanjun Ma 2002-06-18
6403453 Dose control technique for plasma doping in ultra-shallow junction formations Yanjun Ma, Sheng Teng Hsu 2002-06-11
6348373 Method for improving electrical properties of high dielectric constant films Yanjun Ma 2002-02-19
6297539 Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same Yanjun Ma 2001-10-02
6207589 Method of forming a doped metal oxide dielectric film Yanjun Ma 2001-03-27
6200866 Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET Yanjun Ma, Douglas J. Tweet, David R. Evans 2001-03-13
6190925 Epitaxially grown lead germanate film and deposition method Tingkai Li, Fengyan Zhang, Sheng Teng Hsu 2001-02-20
6184110 Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices Yanjun Ma 2001-02-06
6060755 Aluminum-doped zirconium dielectric film transistor structure and deposition method for same Yanjun Ma 2000-05-09