Issued Patents All Time
Showing 26–50 of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7214583 | Memory cell with an asymmetric crystalline structure | Sheng Teng Hsu, Tingkai Li, David R. Evans, Wei-Wei Zhuang | 2007-05-08 |
| 7205238 | Chemical mechanical polish of PCMO thin films for RRAM applications | David R. Evans, Allen Burmaster | 2007-04-17 |
| 7193267 | Cross-point resistor memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2007-03-20 |
| 7192866 | Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects | David R. Evans, Sheng Teng Hsu | 2007-03-20 |
| 7157287 | Method of substrate surface treatment for RRAM thin film deposition | Wei-Wei Zhuang, Tingkai Li, David R. Evans, Sheng Teng Hsu | 2007-01-02 |
| 7141481 | Method of fabricating nano-scale resistance cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang, Fengyan Zhang | 2006-11-28 |
| 7094691 | MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications | Robert Barrowcliff, David R. Evans, Sheng Teng Hsu | 2006-08-22 |
| 7042066 | Dual-trench isolated crosspoint memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2006-05-09 |
| 7029924 | Buffered-layer memory cell | Sheng Teng Hsu, Tingkai Li, Fengyan Zhang, Wei-Wei Zhuang, David R. Evans +1 more | 2006-04-18 |
| 7015138 | Multi-layered barrier metal thin films for Cu interconnect by ALCVD | Yoshi Ono, David R. Evans, Sheng Teng Hsu | 2006-03-21 |
| 6972211 | Method of fabricating trench isolated cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-12-06 |
| 6939724 | Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer | Wei-Wei Zhuang, Tingkai Li, David R. Evans, Sheng Teng Hsu | 2005-09-06 |
| 6940113 | Trench isolated cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-09-06 |
| 6927120 | Method for forming an asymmetric crystalline structure memory cell | Sheng Teng Hsu, Tingkal Li, David R. Evans, Wei-Wei Zhuang | 2005-08-09 |
| 6911361 | Low temperature processing of PCMO thin film on Ir substrate for RRAM application | Fengyan Zhang, Wei-Wei Zhuang, Sheng Teng Hsu | 2005-06-28 |
| 6905937 | Methods of fabricating a cross-point resistor memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-06-14 |
| 6887523 | Method for metal oxide thin film deposition via MOCVD | Wei-Wei Zhuang, Sheng Teng Hsu | 2005-05-03 |
| 6875651 | Dual-trench isolated crosspoint memory array and method for fabricating same | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-04-05 |
| 6876521 | Method of making a solid state inductor | Sheng Teng Hsu, Wei-Wei Zhuang | 2005-04-05 |
| 6849564 | 1R1D R-RAM array with floating p-well | Sheng Teng Hsu, Wei-Wei Zhuang, Fengyan Zhang | 2005-02-01 |
| 6849891 | RRAM memory cell electrodes | Sheng Teng Hsu, Fengyan Zhang, Wei-Wei Zhuang, Tingkai Li | 2005-02-01 |
| 6849467 | MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer | Tingkai Li, Robert Barrowcliff, David R. Evans, Sheng Teng Hsu | 2005-02-01 |
| 6841844 | Air gaps copper interconnect structure | Sheng Teng Hsu | 2005-01-11 |
| 6825058 | Methods of fabricating trench isolated cross-point memory array | Sheng Teng Hsu, Wei-Wei Zhuang | 2004-11-30 |
| 6824814 | Preparation of LCPMO thin films which have reversible resistance change properties | Wei-Wei Zhuang, Sheng Teng Hsu, Masayuki Tajiri | 2004-11-30 |