Issued Patents All Time
Showing 76–100 of 400 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7271023 | Floating body germanium phototransistor | Jong-Jan Lee, Jer-Shen Maa, Douglas J. Tweet | 2007-09-18 |
| 7271081 | Metal/ZnOx/metal current limiter | Tingkai Li, Wei-Wei Zhuang, David R. Evans | 2007-09-18 |
| 7265030 | Method of fabricating silicon on glass via layer transfer | Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet | 2007-09-04 |
| 7259076 | High-density SOI cross-point memory fabricating method | — | 2007-08-21 |
| 7259055 | Method of forming high-luminescence silicon electroluminescence device | Tingkai Li, Pooran Chandra Joshi, Wei Gao, Yoshi Ono | 2007-08-21 |
| 7256465 | Ultra-shallow metal oxide surface channel MOS transistor | Tingkai Li, Bruce D. Ulrich | 2007-08-14 |
| 7256426 | Rare earth element-doped silicon/silicon dioxide lattice structure | Tingkai Li, Wei Gao, Yoshi Ono | 2007-08-14 |
| 7255745 | Iridium oxide nanowires and method for forming same | Fengyan Zhang, Robert Barrowcliff | 2007-08-14 |
| 7256429 | Memory cell with buffered-layer | Tingkai Li, Fengyan Zhang, Wei Pan, Wei-Wei Zhuang, David R. Evans +1 more | 2007-08-14 |
| 7247545 | Fabrication of a low defect germanium film by direct wafer bonding | Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet | 2007-07-24 |
| 7247530 | Ultrathin SOI transistor and method of making the same | Jong-Jan Lee | 2007-07-24 |
| 7241670 | Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen | Douglas J. Tweet, David R. Evans, Jer-Shen Maa | 2007-07-10 |
| 7236389 | Cross-point RRAM memory array having low bit line crosstalk | — | 2007-06-26 |
| 7235407 | System and method for forming a bipolar switching PCMO film | Tingkai Li, Lawrence J. Charneski, Wei-Wei Zhuang, David R. Evans | 2007-06-26 |
| 7233036 | Double-junction filterless CMOS color imager cell | Jong-Jan Lee | 2007-06-19 |
| 7226504 | Method to form thick relaxed SiGe layer with trench structure | Jer-Shen Maa, Douglas J. Tweet, Tingkai Li, Jong-Jan Lee | 2007-06-05 |
| 7214583 | Memory cell with an asymmetric crystalline structure | Tingkai Li, David R. Evans, Wei-Wei Zhuang, Wei Pan | 2007-05-08 |
| 7208372 | Non-volatile memory resistor cell with nanotip electrode | Fengyan Zhang, Gregory M. Stecker, Robert Barrowcliff | 2007-04-24 |
| 7196387 | Memory cell with an asymmetrical area | Fengyan Zhang | 2007-03-27 |
| 7193322 | Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices | Jong-Jan Lee | 2007-03-20 |
| 7193280 | Indium oxide conductive film structures | Tingkai Li | 2007-03-20 |
| 7193267 | Cross-point resistor memory array | Wei Pan, Wei-Wei Zhuang | 2007-03-20 |
| 7192866 | Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects | Wei Pan, David R. Evans | 2007-03-20 |
| 7192792 | Method of changing an electrically programmable resistance cross point memory bit | Wei-Wei Zhuang | 2007-03-20 |
| 7186611 | High-density germanium-on-insulator photodiode array | Jong-Jan Lee, Jer-Shen Maa, Douglas J. Tweet | 2007-03-06 |