JL

Jong-Jan Lee

SA Sharp Laboratories Of America: 132 patents #2 of 419Top 1%
EL Elux: 27 patents #4 of 17Top 25%
Sharp Kabushiki Kaisha: 13 patents #1,272 of 10,731Top 15%
ST Sharp Microelectronics Technology: 4 patents #6 of 57Top 15%
OU Oregon State University: 1 patents #112 of 377Top 30%
IN Innolux: 1 patents #643 of 1,038Top 65%
AT Advanced Optoelectronic Technology: 1 patents #84 of 118Top 75%
📍 Camas, WA: #2 of 330 inventorsTop 1%
🗺 Washington: #89 of 76,902 inventorsTop 1%
Overall (All Time): #4,957 of 4,157,543Top 1%
167
Patents All Time

Issued Patents All Time

Showing 151–167 of 167 patents

Patent #TitleCo-InventorsDate
6562703 Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content Jer-Shen Maa, Douglas J. Tweet, Sheng Teng Hsu 2003-05-13
6551947 Method of forming a high quality gate oxide at low temperatures Yoshi Ono 2003-04-22
6510073 Two transistor ferroelectric non-volatile memory Sheng Teng Hsu 2003-01-21
6242771 Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications Sheng Teng Hsu, Chien-Hsiung Peng 2001-06-05
6146904 Method of making a two transistor ferroelectric memory cell Sheng Teng Hsu 2000-11-14
6140189 Method for fabricating a LOCOS MOS device for ESD protection Sheng Teng Hsu, Katsumasa Fujii, Hidechika Kawazoe 2000-10-31
6117691 Method of making a single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization Sheng Teng Hsu 2000-09-12
6048738 Method of making ferroelectric memory cell for VLSI RAM array Sheng Teng Hsu 2000-04-11
6018171 Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same Sheng Teng Hsu, Chien-Hsiung Peng 2000-01-25
6011285 C-axis oriented thin film ferroelectric transistor memory cell and method of making the same Sheng Teng Hsu, Chien-Hsiung Peng 2000-01-04
5962884 Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same Sheng Teng Hsu 1999-10-05
5942776 Shallow junction ferroelectric memory cell and method of making the same Sheng Teng Hsu 1999-08-24
5932904 Two transistor ferroelectric memory cell Sheng Teng Hsu 1999-08-03
5910673 Locos MOS device for ESD protection Sheng Teng Hsu, Katsumasa Fujii, Hidechika Kawazoe 1999-06-08
5907762 Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing David R. Evans, Sheng Teng Hsu 1999-05-25
5891782 Method for fabricating an asymmetric channel doped MOS structure Sheng Teng Hsu 1999-04-06
5731608 One transistor ferroelectric memory cell and method of making the same Sheng Teng Hsu 1998-03-24