Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5381251 | Optical switch element and a liquid crystal light directional coupler used in the optical switch element | Keisaku Nonomura | 1995-01-10 |
| 5319220 | Silicon carbide semiconductor device | Akira Suzuki, Katsuki Furukawa, Yoshihisa Fujii, Atsuko Ogura | 1994-06-07 |
| 5279701 | Method for the growth of silicon carbide single crystals | Akira Suzuki, Katsuki Furukawa, Yoshihisa Fujii | 1994-01-18 |
| 5216264 | Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact | Yoshihisa Fujii, Akira Suzuki, Katsuki Furukawa | 1993-06-01 |
| 5184199 | Silicon carbide semiconductor device | Yoshihisa Fujii, Akira Suzuki, Katsuki Furukawa | 1993-02-02 |
| 5135885 | Method of manufacturing silicon carbide FETS | Katsuki Furukawa, Yoshihisa Fujii, Akira Suzuki | 1992-08-04 |
| 5063421 | Silicon carbide light emitting diode having a pn junction | Akira Suzuki, Katsuki Furukawa, Yoshihisa Fujii | 1991-11-05 |
| 5049950 | MIS structure photosensor | Yoshihisa Fujii, Katsuki Furukawa, Kenji Nakanishi, Atsuko Ogura | 1991-09-17 |
| 4990994 | Electrode structure for silicon carbide semiconductors | Katsuki Furukawa, Akira Suzuki, Atsuko Uemoto | 1991-02-05 |
| 4897149 | Method of fabricating single-crystal substrates of silicon carbide | Akira Suzuki, Katsuki Furukawa | 1990-01-30 |
| 4865659 | Heteroepitaxial growth of SiC on Si | Akira Suzuki, Katsuki Furukawa, Yoshihisa Fujii, Akitsugu Hatano, Atsuko Uemoto +1 more | 1989-09-12 |