Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6888867 | Semiconductor laser device and fabrication method thereof | Nobuhiko Sawaki, Yoshio Honda, Norifumi Kameshiro, Masahito Yamaguchi, Norikatsu Koide +2 more | 2005-05-03 |
| 6635901 | Semiconductor device including an InGaAIN layer | Nobuhiko Sawaki, Yoshio Honda, Norikatsu Koide | 2003-10-21 |
| 5804839 | III-V nitride compound semiconductor device and method for fabricating the same | Daisuke Hanaoka | 1998-09-08 |
| 5693180 | Dry etching method for a gallium nitride type compound semiconductor | Satoshi Sugahara | 1997-12-02 |
| 5433167 | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal | Yoshimitsu Tajima, Akira Suzuki | 1995-07-18 |
| 5387804 | Light emitting diode | Akira Suzuki, Mitsuhiro Shigeta, Yoshihisa Fujii | 1995-02-07 |
| 5329141 | Light emitting diode | Akira Suzuki, Yoshihisa Fujii, Hajime Saito, Yoshimitsu Tajima | 1994-07-12 |
| 5319220 | Silicon carbide semiconductor device | Akira Suzuki, Mitsuhiro Shigeta, Yoshihisa Fujii, Atsuko Ogura | 1994-06-07 |
| 5288365 | Method for growing a silicon carbide single crystal | Yoshimitsu Tajima, Akira Suzuki | 1994-02-22 |
| 5279701 | Method for the growth of silicon carbide single crystals | Mitsuhiro Shigeta, Akira Suzuki, Yoshihisa Fujii | 1994-01-18 |
| 5272107 | Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device | Akira Suzuki | 1993-12-21 |
| 5243204 | Silicon carbide light emitting diode and a method for the same | Akira Suzuki, Yoshihisa Fujii | 1993-09-07 |
| 5230768 | Method for the production of SiC single crystals by using a specific substrate crystal orientation | Akira Suzuki, Yoshihisa Fujii | 1993-07-27 |
| 5229625 | Schottky barrier gate type field effect transistor | Akira Suzuki, Akitsugu Hatano, Atsuko Uemoto | 1993-07-20 |
| 5216264 | Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact | Yoshihisa Fujii, Akira Suzuki, Mitsuhiro Shigeta | 1993-06-01 |
| 5184199 | Silicon carbide semiconductor device | Yoshihisa Fujii, Akira Suzuki, Mitsuhiro Shigeta | 1993-02-02 |
| 5170231 | Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current | Yoshihisa Fujii, Akira Suzuki | 1992-12-08 |
| 5135885 | Method of manufacturing silicon carbide FETS | Yoshihisa Fujii, Mitsuhiro Shigeta, Akira Suzuki | 1992-08-04 |
| 5124779 | Silicon carbide semiconductor device with ohmic electrode consisting of alloy | Akira Suzuki, Yoshihisa Fujii | 1992-06-23 |
| 5063421 | Silicon carbide light emitting diode having a pn junction | Akira Suzuki, Mitsuhiro Shigeta, Yoshihisa Fujii | 1991-11-05 |
| 5049950 | MIS structure photosensor | Yoshihisa Fujii, Mitsuhiro Shigeta, Kenji Nakanishi, Atsuko Ogura | 1991-09-17 |
| 5037502 | Process for producing a single-crystal substrate of silicon carbide | Akira Suzuki | 1991-08-06 |
| 5030580 | Method for producing a silicon carbide semiconductor device | Akira Suzuki, Yoshihisa Fujii | 1991-07-09 |
| 4990994 | Electrode structure for silicon carbide semiconductors | Akira Suzuki, Mitsuhiro Shigeta, Atsuko Uemoto | 1991-02-05 |
| 4966860 | Process for producing a SiC semiconductor device | Akira Suzuki | 1990-10-30 |