| 10062757 |
Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device |
Fabrizio Fausto Renzo Toia, Elisabetta Pizzi, Simone Dario MARIANI |
2018-08-28 |
| RE37424 |
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage |
Paola Galbiati, Lucia Zullino |
2001-10-30 |
| 6093588 |
Process for fabricating a high voltage MOSFET |
Riccardo De Petro, Paola Galbiati, Michele Palmieri |
2000-07-25 |
| 6022778 |
Process for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells |
Paola Galbiati, Michele Palmieri |
2000-02-08 |
| 5852314 |
Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground |
Riccardo Depetro, Antonio Andreini |
1998-12-22 |
| 5837554 |
Integrated circuit with EPROM cells |
Tiziana Cavioni, Stefano Manzini |
1998-11-17 |
| 5804884 |
Surface electrical field delimiting structure for an integrated circuit |
Claudio Diazzi, Bruno Murari, Ubaldo Mastromatteo |
1998-09-08 |
| 5777366 |
Integrated device with a structure for protection against high electric fields |
Riccardo Depetro |
1998-07-07 |
| 5610421 |
Integrated circuit with EPROM cells |
Tiziana Cavioni, Stefano Manzini |
1997-03-11 |
| RE35442 |
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
Paola Galbiati, Lucia Zullino |
1997-02-04 |
| 5589405 |
Method for fabricating VDMOS transistor with improved breakdown characteristics |
Paola Galbiati, Lucia Zullino |
1996-12-31 |
| 5430316 |
VDMOS transistor with improved breakdown characteristics |
Paola Galbiati, Lucia Zullino |
1995-07-04 |
| 5126911 |
Integrated circuit self-protected against reversal of the supply battery polarity |
Bruno Murari |
1992-06-30 |
| 5081517 |
Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
Paola Galbiati, Lucia Zullino |
1992-01-14 |
| 5041895 |
Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage |
Paola Galbiati, Luica Zullino |
1991-08-20 |
| 4949142 |
Integrated N-channel power MOS bridge circuit |
Paola Galbiati |
1990-08-14 |
| 4892836 |
Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices |
Antonio Andreini, Paola Galbiati |
1990-01-09 |
| 4887142 |
Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication |
Franco Bertotti, Carlo Cini, Paola Galbiati |
1989-12-12 |
| 4774198 |
Self-aligned process for fabricating small DMOS cells |
Antonio Andreini, Paola Galbiati |
1988-09-27 |
| 4757032 |
Method for DMOS semiconductor device fabrication |
— |
1988-07-12 |
| 4721686 |
Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopants |
Paola Galbiati, Antonio Andreini |
1988-01-26 |
| 4718977 |
Process for forming semiconductor device having multi-thickness metallization |
Giulio Iannuzzi, Giorgio De Santi, Fabrizio Andreani |
1988-01-12 |