Issued Patents All Time
Showing 251–275 of 386 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9406840 | Semiconductor layer including compositional inhomogeneities | Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska +1 more | 2016-08-02 |
| 9397260 | Patterned layer design for group III nitride layer growth | Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky +1 more | 2016-07-19 |
| 9391189 | Lateral/vertical semiconductor device | Grigory Simin, Mikhail Gaevski, Remigijus Gaska | 2016-07-12 |
| 9385271 | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer | Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang | 2016-07-05 |
| 9368580 | Semiconductor material doping | Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang | 2016-06-14 |
| 9349848 | Gateless switch with capacitively-coupled contacts | Grigory Simin, Remigijus Gaska | 2016-05-24 |
| 9339571 | Device for disinfecting a surface of an item using ultraviolet radiation | Yuri Bilenko, Alexander Dobrinsky | 2016-05-17 |
| 9337387 | Emitting device with improved extraction | Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2016-05-10 |
| 9330906 | Stress relieving semiconductor layer | Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Remigijus Gaska | 2016-05-03 |
| 9331244 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang +1 more | 2016-05-03 |
| 9324560 | Patterned substrate design for layer growth | Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Remigijus Gaska | 2016-04-26 |
| 9312448 | Metallic contact for optoelectronic semiconductor device | Alexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2016-04-12 |
| 9312347 | Semiconductor device with multiple space-charge control electrodes | Grigory Simin, Remigijus Gaska | 2016-04-12 |
| 9312428 | Light emitting heterostructure with partially relaxed semiconductor layer | Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2016-04-12 |
| 9287455 | Deep ultraviolet light emitting diode | Remigijus Gaska, Jinwei Yang | 2016-03-15 |
| 9287442 | Semiconductor material doping | Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky | 2016-03-15 |
| 9287449 | Ultraviolet reflective rough adhesive contact | Remigijus Gaska, Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Jinwei Yang | 2016-03-15 |
| 9281441 | Semiconductor layer including compositional inhomogeneities | Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska | 2016-03-08 |
| 9269788 | Ohmic contact to semiconductor | Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky, Maxim S. Shatalov | 2016-02-23 |
| 9267770 | Light emitting diodes for simulation of missile signatures | Remigijus Gaska, Alexander Dobrinsky, Maxim S. Shatalov | 2016-02-23 |
| 9263533 | High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections | Grigory Simin, Remigijus Gaska | 2016-02-16 |
| 9263538 | Ohmic contact to semiconductor | Remigijus Gaska | 2016-02-16 |
| 9256240 | Semiconductor device with multiple space-charge control electrodes | Grigory Simin, Remigijus Gaska | 2016-02-09 |
| 9190510 | Semiconductor device with breakdown preventing layer | Grigory Simin, Remigijus Gaska | 2015-11-17 |
| 9184339 | Deep ultraviolet light emitting diode | Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky | 2015-11-10 |