Issued Patents All Time
Showing 51–75 of 77 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9406840 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more | 2016-08-02 |
| 9397260 | Patterned layer design for group III nitride layer growth | Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2016-07-19 |
| 9385271 | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2016-07-05 |
| 9368580 | Semiconductor material doping | Maxim S. Shatalov, Remigijus Gaska, Michael Shur | 2016-06-14 |
| 9331244 | Semiconductor structure with inhomogeneous regions | Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Michael Shur +1 more | 2016-05-03 |
| 9330906 | Stress relieving semiconductor layer | Maxim S. Shatalov, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska | 2016-05-03 |
| 9324560 | Patterned substrate design for layer growth | Maxim S. Shatalov, Rakesh Jain, Michael Shur, Remigijus Gaska | 2016-04-26 |
| 9287442 | Semiconductor material doping | Maxim S. Shatalov, Remigijus Gaska, Michael Shur, Alexander Dobrinsky | 2016-03-15 |
| 9287455 | Deep ultraviolet light emitting diode | Michael Shur, Remigijus Gaska | 2016-03-15 |
| 9287449 | Ultraviolet reflective rough adhesive contact | Remigijus Gaska, Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Michael Shur | 2016-03-15 |
| 9281441 | Semiconductor layer including compositional inhomogeneities | Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2016-03-08 |
| 9269788 | Ohmic contact to semiconductor | Remigijus Gaska, Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov | 2016-02-23 |
| 9105792 | Patterned layer design for group III nitride layer growth | Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more | 2015-08-11 |
| 9087695 | Multi-wafer reactor | Igor Agafonov, Michael Shur, Remigijus Gaska | 2015-07-21 |
| 9042420 | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2015-05-26 |
| 8993996 | Superlattice structure | Michael Shur, Remigijus Gaska, Alexander Dobrinsky | 2015-03-31 |
| 8981403 | Patterned substrate design for layer growth | Maxim S. Shatalov, Rakesh Jain, Michael Shur, Remigijus Gaska | 2015-03-17 |
| 8895959 | Superlattice structure and method for making the same | Michael Shur, Remigijus Gaska | 2014-11-25 |
| 8879598 | Emitting device with compositional and doping inhomogeneities in semiconductor layers | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2014-11-04 |
| 8791450 | Deep ultraviolet light emitting diode | Michael Shur, Remigijus Gaska | 2014-07-29 |
| 8787418 | Emitting device with compositional and doping inhomogeneities in semiconductor layers | Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska | 2014-07-22 |
| 8698127 | Superlattice structure and method for making the same | Michael Shur, Remigijus Gaska | 2014-04-15 |
| 8633468 | Light emitting device with dislocation bending structure | Remigijus Gaska, Michael Shur | 2014-01-21 |
| 8426225 | Semiconductor material doping based on target valence band discontinuity | Maxim S. Shatalov, Remigijus Gaska, Michael Shur | 2013-04-23 |
| 7348606 | Nitride-based heterostructure devices | Muhammad Asif Khan, Remigijus Gaska, Michael Shur | 2008-03-25 |