Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205596 | Method of FinFET contact formation | Longjuan Tang | 2021-12-21 |
| 10707117 | Interconnection structure and method for manufacturing same | Kai Yan, Duan Wu | 2020-07-07 |
| 10403732 | Semiconductor device including stripe structures | Xiaoying Meng | 2019-09-03 |
| 10050036 | Semiconductor structure having common gate | Xiaoying Meng | 2018-08-14 |
| 9741820 | PMOS transistor and fabrication method thereof | Lihong Xiao | 2017-08-22 |
| 9704972 | Semiconductor structures and fabrication method thereof | Jie Chen | 2017-07-11 |
| 9689132 | Permanent drainage ditch adapted to improve yield from farmland | — | 2017-06-27 |
| 9660058 | Method of FinFET formation | — | 2017-05-23 |
| 9640657 | Semiconductor device | — | 2017-05-02 |
| 9508609 | Fin field effect transistor and method for forming the same | — | 2016-11-29 |
| 9331079 | Semiconductor device and method of manufacturing the same | — | 2016-05-03 |
| 9312355 | Stripe structures and fabrication method thereof | Xiaoying Meng | 2016-04-12 |
| 9196725 | Semiconductor structure having common gate and fabrication method thereof | Xiaoying Meng | 2015-11-24 |
| 9147746 | MOS transistors and fabrication method thereof | — | 2015-09-29 |
| 9123812 | Semiconductor device and fabrication method | — | 2015-09-01 |
| 9099338 | Method of forming high K metal gate | — | 2015-08-04 |
| 8877651 | Semiconductor device and manufacturing method involving multilayer contact etch stop | Xinpeng Wang, Yi-Chiau Huang | 2014-11-04 |
| 8377827 | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate | Haiyang Zhang, Qingtian Ma | 2013-02-19 |
| 8367554 | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate | Haiyang Zhang, Qingtian Ma | 2013-02-05 |
| 8039402 | Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrate | Haiyang Zhang, Qingtian Ma | 2011-10-18 |