Issued Patents All Time
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8377827 | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate | Qiuhua Han, Haiyang Zhang | 2013-02-19 |
| 8367554 | Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate | Qiuhua Han, Haiyang Zhang | 2013-02-05 |
| 8039402 | Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrate | Qiuhua Han, Haiyang Zhang | 2011-10-18 |