Issued Patents All Time
Showing 201–219 of 219 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6528358 | Semiconductor device and method for fabricating the same | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame +2 more | 2003-03-04 |
| 6504174 | Semiconductor device and method for fabricating the same | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame +2 more | 2003-01-07 |
| 6478263 | Semiconductor device and its manufacturing method | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame +2 more | 2002-11-12 |
| 6465287 | Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 2002-10-15 |
| 6461899 | Oxynitride laminate “blocking layer” for thin film semiconductor devices | Hidehito Kitakado, Shunpei Yamazaki, Taketomi Asami | 2002-10-08 |
| 6426517 | Active matrix display device having multiple gate electrode portions | Yosuke TSUKAMOTO | 2002-07-30 |
| 6396078 | Semiconductor device with a tapered hole formed using multiple layers with different etching rates | Hideki Uochi, Mitsunori Sakama, Toshimitsu Konuma, Shunpei Yamazaki | 2002-05-28 |
| 6380558 | Semiconductor device and method of fabricating the same | Shunpei Yamazaki, Taketomi Asami, Toru Takayama, Ritsuko Kawasaki, Hiroki Adachi +3 more | 2002-04-30 |
| 6316810 | Display switch with double layered gate insulation and resinous interlayer dielectric | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 2001-11-13 |
| 6225152 | Semiconductor device and fabrication method thereof | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 2001-05-01 |
| 6184559 | Active matrix display device having multiple gate electrode portions | Yosuke TSUKAMOTO | 2001-02-06 |
| 6180439 | Method for fabricating a semiconductor device | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 2001-01-30 |
| 6093934 | Thin film transistor having grain boundaries with segregated oxygen and halogen elements | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame +2 more | 2000-07-25 |
| 6077731 | Semiconductor device and method for fabricating the same | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame +2 more | 2000-06-20 |
| 6048780 | Semiconductor device and manufacturing method for the same | — | 2000-04-11 |
| 5985740 | Method of manufacturing a semiconductor device including reduction of a catalyst | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 1999-11-16 |
| 5888858 | Semiconductor device and fabrication method thereof | Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Mitsuaki Osame | 1999-03-30 |
| 5789762 | Semiconductor active matrix circuit | Jun Koyama, Yasuhiko Takemura, Shunpei Yamazaki, Akiharu Miyanaga, Hisashi Ohtani | 1998-08-04 |
| 5773847 | Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the other | — | 1998-06-30 |