IN

Isamu Namose

SE Seiko Epson: 22 patents #789 of 7,774Top 15%
Applied Materials: 2 patents #3,641 of 7,310Top 50%
Overall (All Time): #185,851 of 4,157,543Top 5%
23
Patents All Time

Issued Patents All Time

Showing 1–23 of 23 patents

Patent #TitleCo-InventorsDate
8223285 Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus 2012-07-17
8013849 Active-matrix device, electro-optical display device, and electronic apparatus 2011-09-06
7999987 Electro-optical display device and electronic device 2011-08-16
7952041 Active-matrix device, electro-optical display device, and electronic apparatus 2011-05-31
7692195 Active-matrix device, electro-optical display device, and electronic apparatus 2010-04-06
7067813 Infrared absorption measurement method, infrared absorption measurement device, and method of manufacturing semiconductor device 2006-06-27
7057175 Infrared absorption measurement method, infrared absorption measurement device, and method of manufacturing semiconductor device 2006-06-06
7037843 Plasma etching method 2006-05-02
6838011 Method of processing PFC and apparatus for processing PFC 2005-01-04
6821380 Temperature adjustment apparatus 2004-11-23
6649530 Plasma etching at reduced pressure 2003-11-18
6642521 Method for measuring greenhouse gases using infrared absorption spectrometer Toshikazu Sugiura 2003-11-04
5520770 Method of fabricating semiconductor device 1996-05-28
5348910 Method of manufacturing a semiconductor device and the product thereby 1994-09-20
5332464 Semiconductor device manfuacturing apparatus 1994-07-26
5296093 Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure Chester A. Szwejkowski, Ian Latchford, Kazumi Tsuchida 1994-03-22
5294294 Method of dry etching in semiconductor device processing 1994-03-15
5206535 Semiconductor device structure 1993-04-27
5200016 Semiconductor device manufacturing apparatus 1993-04-06
5173151 Method of dry etching in semiconductor device processing 1992-12-22
5147499 Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure Chester A. Szwejkowski, Ian Latchford, Kazumi Tsuchida 1992-09-15
4980311 Method of fabricating a semiconductor device 1990-12-25
4923821 Forming trench in semiconductor substrate with rounded corners 1990-05-08