Issued Patents All Time
Showing 26–50 of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8541247 | Non-volatile memory cell with lateral pinning | Antoine Khoueir, Brian Lee, Patrick J. Ryan | 2013-09-24 |
| 8531876 | Unipolar spin-transfer switching memory unit | Xiaohua Lou | 2013-09-10 |
| 8526252 | Quiescent testing of non-volatile memory array | Hai Li, Yiran Chen, Alan Xuguang Wang, Wenzhong Zhu, Andreas Roelofs | 2013-09-03 |
| 8519498 | Magnetic stack having reference layers with orthogonal magnetization orientation directions | Yuankai Zheng, Zheng Gao, Wenzhong Zhu, Wonjoon Jung | 2013-08-27 |
| 8519376 | Nonvolatile resistive memory devices | Dimitar V. Dimitrov, Insik Jin | 2013-08-27 |
| 8508973 | Method of switching out-of-plane magnetic tunnel junction cells | Insik Jin, Xiaobin Wang, Yong Lu | 2013-08-13 |
| 8508005 | STRAM with compensation element and method of making the same | Kaizhong Gao, Wenzhong Zhu, Olle Gunnar Heinonen | 2013-08-13 |
| 8495118 | Tunable random bit generator with magnetic tunnel junction | Xiaobin Wang, Wenzhong Zhu, Henry Huang, Yiran Chen | 2013-07-23 |
| 8482967 | Magnetic memory element with multi-domain storage layer | Yuankai Zheng, Xiaobin Wang, Dimitar V. Dimitrov, Pat J. Ryan | 2013-07-09 |
| 8466525 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Michael Xuefei Tang | 2013-06-18 |
| 8466524 | Static magnetic field assisted resistive sense element | Yuankai Zheng, Xiaohua Lou, Michael Xuefei Tang | 2013-06-18 |
| 8462543 | Thermally assisted multi-bit MRAM | Yuankai Zheng, Dimitar V. Dimitrov | 2013-06-11 |
| 8455117 | Bit-patterned stack with antiferromagnetic shell | Kaizhong Gao, Song S. Xue | 2013-06-04 |
| 8422279 | STRAM with composite free magnetic element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Kaizhong Gao, Olle Gunnar Heinonen +1 more | 2013-04-16 |
| 8422278 | Memory with separate read and write paths | Hongyue Liu, Michael Xuefei Tang, Antoine Khoueir, Song S. Xue | 2013-04-16 |
| 8422277 | Field assisted switching of a magnetic memory element | Xin Cao, Wenzhong Zhu, Robert William Lamberton, Kaizhong Gao | 2013-04-16 |
| 8416620 | Magnetic stack having assist layer | Yuankai Zheng, Zheng Gao, Wonjoon Jung, Xuebing Feng, Xiaohua Lou | 2013-04-09 |
| 8416619 | Magnetic memory with phonon glass electron crystal material | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang | 2013-04-09 |
| 8405171 | Memory cell with phonon-blocking insulating layer | Yuankai Zheng, Xiaohua Lou, Wei Tian, Zheng Gao | 2013-03-26 |
| 8400867 | Non-volatile memory with stray magnetic field compensation | Dimitar V. Dimitrov, Olle Gunnar Heinonen, Dexin Wang | 2013-03-19 |
| 8400825 | Magnetic field assisted stram cells | Xiaobin Wang, Hongyue Liu, Insik Jin, Andreas Roelofs, Eileen Yan +1 more | 2013-03-19 |
| 8400823 | Memory with separate read and write paths | Hongyue Liu, Michael Xuefei Tang, Antoine Khoueir, Song S. Xue | 2013-03-19 |
| 8399908 | Programmable metallization memory cells via selective channel forming | Ming Sun, Dexin Wang, Shuiyuan Huang, Michael Xuefei Tang, Song S. Xue | 2013-03-19 |
| 8391055 | Magnetic tunnel junction and memristor apparatus | Xiaobin Wang, Yiran Chen, Alan Xuguang Wang, Wenzhong Zhu, Hai Li +1 more | 2013-03-05 |
| 8363442 | NAND based resistive sense memory cell architecture | Harry Hongyue Liu, Antoine Khoueir, Song S. Xue | 2013-01-29 |