Issued Patents All Time
Showing 51–75 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7944729 | Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell array | Yiran Chen, Daniel S. Reed, Yong Lu, Harry Hongyue Liu, Rod V. Bowman | 2011-05-17 |
| 7944730 | Write method with voltage line tuning | Yiran Chen, Wengzhong Zhu, Xiaobin Wang, Ran Wang, Hongyue Liu | 2011-05-17 |
| 7944731 | Resistive sense memory array with partial block update capability | Yiran Chen, Daniel S. Reed, Yong Lu, Harry Hongyue Liu | 2011-05-17 |
| 7940548 | Shared bit line and source line resistive sense memory structure | Xuguang Wang, Hongyue Liu | 2011-05-10 |
| 7936622 | Defective bit scheme for multi-layer integrated memory device | Yiran Chen, Dadi Setiadi, Harry Hongyue Liu, Brian Lee | 2011-05-03 |
| 7936625 | Pipeline sensing using voltage storage elements to read non-volatile memory cells | Yiran Chen, Harry Hongyue Liu, KangYong Kim, Henry Huang | 2011-05-03 |
| 7936580 | MRAM diode array and access method | Yiran Chen, Hongyue Liu, Yong Lu, Song S. Xue | 2011-05-03 |
| 7936588 | Memory array with read reference voltage cells | Hongyue Liu, Yong Lu, Andrew John Carter, Yiran Chen | 2011-05-03 |
| 7916528 | Predictive thermal preconditioning and timing control for non-volatile memory cells | Yiran Chen, Harry Hongyue Liu, Dimitar V. Dimitrov, Alan Xuguang Wang, Xiaobin Wang | 2011-03-29 |
| 7916515 | Non-volatile memory read/write verify | Yiran Chen, Harry Hongyue Liu, Alan Xuguang Wang | 2011-03-29 |
| 7898844 | Magnetic tunnel junction and memristor apparatus | Xiaobin Wang, Yiran Chen, Alan Xuguang Wang, Haiwen Xi, Wenzhong Zhu +1 more | 2011-03-01 |
| 7898838 | Resistive sense memory calibration for self-reference read method | Yiran Chen, Wenzhong Zhu, Xiaobin Wang, Henry Huang, Hongyue Liu | 2011-03-01 |
| 7894250 | Stuck-at defect condition repair for a non-volatile memory cell | Alan Xuguang Wang, Xiaobin Wang, Dimitar V. Dimitrov, Haiwen Xi, Harry Hongyue Liu | 2011-02-22 |
| 7885097 | Non-volatile memory array with resistive sense element block erase and uni-directional write | Daniel S. Reed, Yong Lu, Andrew John Carter | 2011-02-08 |
| 7881094 | Voltage reference generation for resistive sense memory cells | Yiran Chen, Harry Hongyue Liu, KangYong Kim, Henry Huang | 2011-02-01 |
| 7876599 | Spatial correlation of reference cells in resistive memory array | Yiran Chen, Wenzhong Zhu, Xiaobin Wang, Henry Huang, Hongyue Liu | 2011-01-25 |
| 7859891 | Static source plane in stram | Yiran Chen, Hongyue Liu, Xuguang Wang | 2010-12-28 |
| 7855923 | Write current compensation using word line boosting circuitry | Yiran Chen, Harry Hongyue Liu, Henry Huang, Ran Wang | 2010-12-21 |
| 7852660 | Enhancing read and write sense margins in a resistive sense element | Wenzhong Zhu, Yiran Chen, Xiaobin Wang, Henry Huang, Haiwen Xi | 2010-12-14 |
| 7852665 | Memory cell with proportional current self-reference sensing | Yiran Chen, Wenzhong Zhu, Xiaobin Wang, Ran Wang, Harry Hongyue Liu | 2010-12-14 |
| 7830700 | Resistive sense memory array with partial block update capability | Yiran Chen, Daniel S. Reed, Yong Lu, Harry Hongyue Liu | 2010-11-09 |
| 7830726 | Data storage using read-mask-write operation | Henry Huang, Yong Lu | 2010-11-09 |
| 7826255 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yong Lu, Yiran Chen +3 more | 2010-11-02 |
| 7755923 | Memory array with read reference voltage cells | Hongyue Liu, Yong Lu, Andrew John Carter, Yiran Chen | 2010-07-13 |
| 7755965 | Temperature dependent system for reading ST-RAM | Yiran Chen, Hongyue Liu, Henry Huang, Yong Lu | 2010-07-13 |