| 9006795 |
Resistance-switching memory cells adapted for use at low voltage |
Xiaoyu Yang, Roy E. Scheuerlein, Feng Li |
2015-04-14 |
| 8686476 |
Resistance-switching memory cells adapted for use at low voltage |
Xiaoyu Yang, Roy E. Scheuerlein, Feng Li |
2014-04-01 |
| 8350299 |
Memory with high dielectric constant antifuses adapted for use at low voltage |
Xiaoyu Yang, Roy E. Scheuerlein, Feng Li |
2013-01-08 |
| 8314023 |
Methods involving memory with high dielectric constant antifuses adapted for use at low voltage |
Xiaoyu Yang, Roy E. Scheuerlein, Feng Li |
2012-11-20 |
| 8179717 |
Maintaining integrity of preloaded content in non-volatile memory during surface mounting |
Zac Shepard, Xiaoyu Yang, Qing Li, Enosh Levi, Kim Le +2 more |
2012-05-15 |
| 7944029 |
Non-volatile memory with reduced mobile ion diffusion |
Xiaoyu Yang, Qing Li, Kim Le |
2011-05-17 |
| 7781805 |
Memory with high dielectric constant antifuses adapted for use at low voltage |
Xiaoyu Yang, Roy E. Scheurelein, Feng Li |
2010-08-24 |
| 7701746 |
Method of making memory cell with voltage modulated sidewall poly resistor |
Xiaoyu Yang, Kim Le |
2010-04-20 |