Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7482616 | Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same | Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Gwan-Hyeob Koh, Choong-Man Lee +10 more | 2009-01-27 |
| 7479405 | PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same | Jae Hyun Park, Hyeong-Geun An, Su-Jin Ahn, Hyung-Joo Youn, Kyu-Chul Kim | 2009-01-20 |
| 7453111 | Phase-change memory device | Kyung-Chang Ryoo, Ju-Chul Park, Se-ahn Song | 2008-11-18 |
| 7348616 | Ferroelectric integrated circuit devices having an oxygen penetration path | Heung-Jin Joo, Ki-Nam Kim | 2008-03-25 |
| 7339185 | Phase change memory device and method for forming the same | Se-Ho Lee, Ki-Nam Kim, Su-Youn Lee, Jae Hyun Park | 2008-03-04 |
| 7309885 | PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same | Jae Hyun Park, Hyeong-Geun An, Su-Jin Ahn, Hyung-Joo Youn, Kyu-Chul Kim | 2007-12-18 |
| 7064366 | Ferroelectric memory devices having an expanded plate electrode | Hyun-Yul Kang, Nak-Won Jang | 2006-06-20 |
| 7045839 | Ferroelectric memory devices with improved ferroelectric properties and associated methods for fabricating such memory devices | Nak-Won Jang, Ki-Nam Kim | 2006-05-16 |
| 6979881 | Ferroelectric integrated circuit devices having an oxygen penetration path | Heung-Jin Joo, Ki-Nam Kim | 2005-12-27 |
| 6956279 | Semiconductor device having multi-layer oxygen barrier pattern | — | 2005-10-18 |
| 6911362 | Methods for forming electronic devices including capacitor structures | Ki-Nam Kim, Heung-Jin Joo | 2005-06-28 |
| 6909134 | Ferroelectric memory device using via etch-stop layer and method for manufacturing the same | Ki-Nam Kim, Sang-Woo Lee | 2005-06-21 |
| 6825082 | Ferroelectric memory device and method of forming the same | Ki-Nam Kim | 2004-11-30 |
| 6737694 | Ferroelectric memory device and method of forming the same | Ki-Nam Kim | 2004-05-18 |
| 6713310 | Ferroelectric memory device using via etch-stop layer and method for manufacturing the same | Ki-Nam Kim, Sang-Woo Lee | 2004-03-30 |