HA

Hyeong-Geun An

Samsung: 25 patents #5,082 of 75,807Top 7%
Overall (All Time): #164,735 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #TitleCo-InventorsDate
8644062 Multi-level memory device using resistance material Ik Soo Kim, Sung-Lae Cho, Do Hyung Kim, Dong-Hyun Im, Eun-Hee Cho 2014-02-04
8625325 Memory cells including resistance variable material patterns of different compositions Ik Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho 2014-01-07
8502184 Nonvolatile memory device using variable resistive element Sung-Lae Cho, Ik Soo Kim, Dong-Hyun Im, Eun-Hee Cho 2013-08-06
8426840 Nonvolatile memory cells having phase changeable patterns therein for data storage Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim +4 more 2013-04-23
8187914 Methods of forming a phase change memory device Jin-Il Lee, Urazaev Vladimir, Jin Jeong, Seung-Back Shin, Sung-Lae Cho +3 more 2012-05-29
8039298 Phase changeable memory cell array region and method of forming the same Hideki Horii, Sang-Yeol Kang 2011-10-18
8039829 Contact structure, a semiconductor device employing the same, and methods of manufacturing the same Jeong-Hee Park, Yong-Ho Ha, Joon-Sang Park, Hyun-Suk Kwon, Myung Jin Kang +1 more 2011-10-18
8021977 Methods of forming contact structures and semiconductor devices fabricated using contact structures Young-Lim Park, Gyu-Hwan Oh, Dong-Ho Ahn, Jin-Il Lee 2011-09-20
7824954 Methods of forming phase change memory devices having bottom electrodes Dong-Ho Ahn, Young-Soo Lim, Yong-Ho Ha, Jun-Young Jang, Dong-Won Lim +4 more 2010-11-02
7800095 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Hideki Horii, Jong-Chan Shin, Dong-Ho Ahn, Jun-Soo Bae 2010-09-21
7777212 Phase change memory devices including carbon-containing adhesive pattern Hideki Horii, Min-Young Park, Shin-Hye Kim 2010-08-17
7767568 Phase change memory device and method of fabricating the same Hideki Horii, Jong-Chan Shin, Dong-Ho Ahn, Jun-Soo Bae, Jeong-Hee Park 2010-08-03
7638787 Phase changeable memory cell array region and method of forming the same Hideki Horii, Sang-Yeol Kang 2009-12-29
7638788 Phase change memory device and method of forming the same Dong-Ho Ahn, Hideki Horii, Jong-Chan Shin, Jun-Soo Bae 2009-12-29
7563639 Phase-changeable memory device and method of manufacturing the same Hee-Ju Shin, Jong-Chan Shin, Soon-Oh Park, Han-Bong Ko 2009-07-21
7479405 PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same Jae Hyun Park, Su-Jin Ahn, Yoon-Jong Song, Hyung-Joo Youn, Kyu-Chul Kim 2009-01-20
7309885 PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same Jae Hyun Park, Su-Jin Ahn, Yoon-Jong Song, Hyung-Joo Youn, Kyu-Chul Kim 2007-12-18
7064365 Ferroelectric capacitors including a seed conductive film Sang-Woo Lee, Hyoung Joon Kim 2006-06-20
7023037 Integrated circuit devices having dielectric regions protected with multi-layer insulation structures Hag-Ju Cho 2006-04-04
6815226 Ferroelectric memory device and method of forming the same Kyu-Mann Lee, Yong-Tak Lee 2004-11-09
6815227 Method of fabricating a ferroelectric memory device 2004-11-09
6740531 Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures Hag-Ju Cho 2004-05-25
6717197 Ferroelectric memory device and method of fabricating the same 2004-04-06
6686620 FRAM and method of fabricating the same Soon-Oh Park 2004-02-03
6664578 Ferroelectric memory device and method of forming the same Kyu-Mann Lee, Yong-Tak Lee 2003-12-16