Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7999309 | Semiconductor device | Jae-Man Yoon, Hui-Jung Kim, Hyun-Woo Chung, Hyun-Gi Kim, Kang-Uk Kim | 2011-08-16 |
| 7977725 | Integrated circuit semiconductor device including stacked level transistors | Jae-Man Yoon, Hui-Jung Kim, Hyun-Woo Chung, Kang-Uk Kim, Dong-Gun Park +1 more | 2011-07-12 |
| 7943978 | Semiconductor device | Kang-Uk Kim, Jae-Man Yoon, Hui-Jung Kim, Hyun-Woo Chung, Hyun-Gi Kim | 2011-05-17 |
| 7902026 | Method of fabricating semiconductor device having vertical channel transistor | Hyun-Woo Chung, Jae-Man Yoon, Hui-Jung Kim, Hyun-Gi Kim, Kang-Uk Kim | 2011-03-08 |
| 7872302 | Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate | Hui-Jung Kim, Jae-Man Yoon, Hyun-Woo Chung | 2011-01-18 |
| 7863174 | Vertical pillar transistor | Hui-Jung Kim, Jae-Man Yoon, Hyun-Woo Chung, Hyun-Gi Kim, Kang-Uk Kim | 2011-01-04 |
| 7842572 | Methods of manufacturing semiconductor devices with local recess channel transistors | Se-myeong Jang, Makoto Yoshida | 2010-11-30 |
| 7833864 | Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate | Wook-Je Kim, Nak-Jin Son, Se-myeong Jang, Gyo-young Jin | 2010-11-16 |
| 7737512 | Integrated circuit devices having uniform silicide junctions | Se-myeong Jang, Gyo-young Jin, Hyun Chang Kim | 2010-06-15 |
| 7586150 | Semiconductor devices with local recess channel transistors and methods of manufacturing the same | Se-myeong Jang, Makoto Yoshida | 2009-09-08 |
| 7501668 | Semiconductor memory devices having contact pads with silicide caps thereon | Se-myeong Jang, Gyo-young Jin | 2009-03-10 |
| 7329927 | Integrated circuit devices having uniform silicide junctions | Se-myeong Jang, Gyo-young Jin, Hyun Chang Kim | 2008-02-12 |
| 7307008 | Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole | Gyo-young Jin | 2007-12-11 |
| 7223649 | Method of fabricating transistor of DRAM semiconductor device | Wook-Je Kim, Nak-Jin Son, Se-myeong Jang, Gyo-young Jin | 2007-05-29 |
| 7144798 | Semiconductor memory devices having extending contact pads and related methods | Se-myeong Jang, Gyo-young Jin | 2006-12-05 |
| 6974752 | Methods of fabricating integrated circuit devices having uniform silicide junctions | Se-myeong Jang, Gyo-young Jin, Hyun Chang Kim | 2005-12-13 |
| 6875649 | Methods for manufacturing integrated circuit devices including an isolation region defining an active region area | Gyo-young Jin | 2005-04-05 |
| 6844240 | Semiconductor device having trench isolation | Young Woo Park, Won-seong Lee | 2005-01-18 |
| 6683364 | Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same | Gyo-young Jin | 2004-01-27 |
| 6670689 | Semiconductor device having shallow trench isolation structure | Jun-Yong Roh | 2003-12-30 |
| 6642125 | Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same | Gyo-young Jin | 2003-11-04 |
| 6573168 | Methods for forming conductive contact body for integrated circuits using dummy dielectric layer | Ji Soo Kim, Chang-Woong Chu, Dong Hyun Kim, Hyoung Joon Kim, Byeong-yun Nam +2 more | 2003-06-03 |
| 6372606 | Method of forming isolation trenches in a semiconductor device | — | 2002-04-16 |
| 6326282 | Method of forming trench isolation in a semiconductor device and structure formed thereby | Young Woo Park, Won-seong Lee | 2001-12-04 |
| 6187651 | Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids | — | 2001-02-13 |