SY

Sun-Pil Youn

Samsung: 35 patents #3,282 of 75,807Top 5%
📍 Seoul, KR: #1,411 of 39,741 inventorsTop 4%
Overall (All Time): #98,929 of 4,157,543Top 3%
35
Patents All Time

Issued Patents All Time

Showing 26–35 of 35 patents

Patent #TitleCo-InventorsDate
7465617 Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Min-Chul Sun 2008-12-16
7371669 Method of forming a gate of a semiconductor device Chang-Won Lee, Woong-Hee Sohn, Gil-Heyun Choi, Jong-Ryeol Yoo, Jang-Hee Lee +4 more 2008-05-13
7306996 Methods of fabricating a semiconductor device having a metal gate pattern Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Sung-Man Kim 2007-12-11
7232756 Nickel salicide process with reduced dopant deactivation Ja-Hum Ku, Kwan-Jong Roh, Min-Chul Sun, Min-Joo Kim, Sug-Woo Jung 2007-06-19
7109104 Methods of fabricating a semiconductor device having a metal gate pattern Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Sung-Man Kim 2006-09-19
7098123 Methods of forming a semiconductor device having a metal gate electrode and associated devices Seong-Jun Heo, Sung-Man Kim, Si-Young Choi, Gil-Heyun Choi, Ja-Hum Ku +3 more 2006-08-29
7084061 Methods of fabricating a semiconductor device having MOS transistor with strained channel Min-Chul Sun, Ja-Hum Ku, Sug-Woo Jung, Min-Joo Kim, Kwan-Jong Roh 2006-08-01
7005367 Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Min-Chul Sun 2006-02-28
6864132 Methods of fabricating integrated circuit gates by pretreating prior to oxidizing Jun-Kyu Cho, Si-Young Choi, Sung-Man Kim, Ja-Hum Ku 2005-03-08
6797559 Method of fabricating semiconductor device having metal conducting layer Chang-Won Lee, Si-Young Choi, Seong-Jun Heo, Sung-Man Kim, Min-Chul Sun +1 more 2004-09-28