Issued Patents All Time
Showing 26–50 of 67 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8136017 | Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method | Hyung-Rok Oh, Woo-Yeong Cho, Joon-Min Park | 2012-03-13 |
| 8111563 | Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same | Ho-jung Kim, Chul-Woo Park, Hyun Ho Choi | 2012-02-07 |
| 8054665 | Stacked memory device including a pre-decoder/pre-driver sandwiched between a plurality of inter-decoders/inter-drivers | Seung-eon Ahn, Ho-jung Kim, Chul-Woo Park, Hyun Ho Choi | 2011-11-08 |
| 8050079 | Nonvolatile memory device using variable resistive element | Young Sun Song, Ho-jung Kim | 2011-11-01 |
| 8050074 | Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices | Ho-jung Kim, Chul-Woo Park, Jong-Wan Kim, Hyun Ho Choi, Young-Pil Kim +1 more | 2011-11-01 |
| 8031517 | Memory device, memory system having the same, and programming method of a memory cell | Ho-jung Kim, Chul-Woo Park, Hyun Ho Choi, Seung-eon Ahn | 2011-10-04 |
| 7994493 | Phase change memory devices employing cell diodes and methods of fabricating the same | Woo-Yeong Cho, Du-Eung Kim, Yun-seung Shin, Hyun-Geun Byun, Beak-Hyung Cho +1 more | 2011-08-09 |
| 7993961 | Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines | Hyung-Rok Oh, Du-Eung Kim | 2011-08-09 |
| 7924639 | Nonvolatile memory device using resistance material | Joon-Min Park, Woo-Yeong Cho, Hyung-Rok Oh | 2011-04-12 |
| 7920405 | Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices | Woo-Yeong Cho, Hyung-Rok Oh, Joon-Min Park | 2011-04-05 |
| 7907467 | Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof | Joon-Min Park, Hyung-Rok Oh, Woo-Yeong Cho | 2011-03-15 |
| 7903448 | Resistance random access memory having common source line | Hyung-Rok Oh, Joon-Min Park, Woo-Yeong Cho | 2011-03-08 |
| 7894236 | Nonvolatile memory devices that utilize read/write merge circuits | Hyung-Rok Oh, Woo-Yeong Cho, Joon-Min Park | 2011-02-22 |
| 7869256 | Bi-directional resistive random access memory capable of multi-decoding and method of writing data thereto | Joon-Min Park, Woo-Yeong Cho, Hyung-Rok Oh | 2011-01-11 |
| 7859882 | Resistive memory device and method of writing data | Woo-Yeong Cho, Du-Eung Kim | 2010-12-28 |
| 7843715 | Memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methods | Joon-Min Park, Hyung-Rok Oh, Woo-Yeong Cho | 2010-11-30 |
| 7843716 | Nonvolatile memory device having memory and reference cells | Woo-Yeong Cho, Hyung-Rok Oh, Joon-Min Park | 2010-11-30 |
| 7808811 | Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof | Joon-Min Park, Hyung-Rok Oh, Woo-Yeong Cho | 2010-10-05 |
| 7751234 | Phase change memory device and program method thereof | Kwang-Jin Lee, Du-Eung Kim, Woo-Yeong Cho | 2010-07-06 |
| 7724560 | Nonvolatile memory device having twin memory cells | Woo-Yeong Cho, Hyung-Rok Oh, Joon-Min Park | 2010-05-25 |
| 7710767 | Memory cell array biasing method and a semiconductor memory device | Beak-Hyung Cho, Do-Eung Kim, Choong-Keun Kwak, Woo-Yeong Cho, Hyung-Rok Oh | 2010-05-04 |
| 7701747 | Non-volatile memory including sub cell array and method of writing data thereto | Joon-Min Park, Woo-Yeong Cho, Hyung-Rok Oh | 2010-04-20 |
| 7589367 | Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines | Hyung-Rok Oh, Du-Eung Kim | 2009-09-15 |
| 7586775 | Nonvolatile memory device and related method of operation | Yong-Jin Yoon, Qi Wang | 2009-09-08 |
| 7586776 | Nonvolatile memory devices having multi-filament variable resistivity memory cells therein | Hyung-Rok Oh, Woo-Yeong Cho | 2009-09-08 |