ML

Moon-Sook Lee

Samsung: 36 patents #3,162 of 75,807Top 5%
Overall (All Time): #94,800 of 4,157,543Top 3%
36
Patents All Time

Issued Patents All Time

Showing 25 most recent of 36 patents

Patent #TitleCo-InventorsDate
8873274 Resistive memory cells and devices having asymmetrical contacts In-Gyu Baek, Dong Chul Kim 2014-10-28
8586427 Thin film transistors and methods of manufacturing thin film transistors Sang-hun Jeon, Byeong-Ok Cho 2013-11-19
8338815 Memory units and related semiconductor devices including nanowires Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue 2012-12-25
8329516 Methods of manufacturing semiconductor devices 2012-12-11
8330155 Semiconductor devices having channel layer patterns on a gate insulation layer Sang-hun Jeon 2012-12-11
8247797 Field-effect transistor and sensor based on the same Seung Hun Hong, Byeong Ju Kim 2012-08-21
8227303 Methods of manufacturing CMOS transistor Sang-hun Jeon, Byeong-Ok Cho 2012-07-24
8148212 Methods of manufacturing semiconductor devices 2012-04-03
8105697 Polymer memory device and method of forming the same Byeong-Ok Cho, Takahiro Yasue 2012-01-31
8022410 Thin film transistors Sang-hun Jeon, Byeong-Ok Cho 2011-09-20
8013366 Biosensor using nanoscale material as transistor channel and method of fabricating the same Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue, Jung-hwan Hah 2011-09-06
7994557 Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same In-Gyu Baek 2011-08-09
7994581 CMOS transistor and method of manufacturing the same Sang-hun Jeon, Byeong-Ok Cho 2011-08-09
7961496 Resistive memory cells and devices having asymmetrical contacts In-Gyu Baek, Dong Chul Kim 2011-06-14
7955869 Nonvolatile memory devices and methods of fabricating the same Yasue Takahiro, Byeong-Ok Cho 2011-06-07
7790610 Methods of manufacturing memory units, and methods of manufacturing semiconductor devices Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue 2010-09-07
7741669 Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same In-Gyu Baek 2010-06-22
7663141 Organic memory devices including organic material and fullerene layers Byeong-Ok Cho, Takahiro Yasue 2010-02-16
7639521 Resistive memory cells and devices having asymmetrical contacts In-Gyu Baek, Dong Chul Kim 2009-12-29
7535035 Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same In-Gyu Baek 2009-05-19
7521746 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same 2009-04-21
7480174 Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated In-Gyu Baek 2009-01-20
7446333 Nonvolatile memory devices and methods of manufacturing the same Dong Chul Kim, In-Gyu Baek, Young-Kwan Cha, Sang Jin Park 2008-11-04
7420198 Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same In-Gyu Baek 2008-09-02
7374953 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same 2008-05-20