MH

Min-Koo Han

Samsung: 26 patents #4,862 of 75,807Top 7%
SF Seoul National University Industry Foundation: 9 patents #8 of 804Top 1%
SF Snu R&Db Foundation: 4 patents #42 of 1,470Top 3%
SF Seoul National University R&Db Foundation: 3 patents #189 of 2,771Top 7%
LC Lg Philips Lcd Co.: 2 patents #376 of 888Top 45%
📍 Seoul, KR: #1,249 of 39,741 inventorsTop 4%
Overall (All Time): #86,782 of 4,157,543Top 3%
38
Patents All Time

Issued Patents All Time

Showing 26–38 of 38 patents

Patent #TitleCo-InventorsDate
6455874 Thin film transistor and fabrication method thereof Kee-Chan Park, Juhn Suk Yoo 2002-09-24
5920085 Multiple floating gate field effect transistors and methods of operating same Byung-Hyuk Min, Cheol Min Park, Keun-Ho Jang, Jae Hong Jun 1999-07-06
5907181 Tapered dielectric microelectronic structures and associated methods Yearn-Ik Choi, Han-Soo Kim, Seong-Dong Kim 1999-05-25
5894157 MOS transistor having an offset resistance derived from a multiple region gate electrode Byung-Hyuk Min 1999-04-13
5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Chong-man Yun, Yearn-Ik Choi 1999-04-06
5885859 Methods of fabricating multi-gate, offset source and drain field effect transistors Byung-Hyuk Min, Cheol Min Park, Keun-Ho Jang, Jae Hong Jun 1999-03-23
5840602 Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors Byung-Hyuk Min, Cheol Min Park, Byung-Seong Bae 1998-11-24
5804837 Polysilicon thin-film transistor and method for fabricating the same Byung-Hyuk Min, Cheol Min Park 1998-09-08
5796126 Hybrid schottky injection field effect transistor Yearn-Ik Choi, Jae Hyung Kim, Han-Soo Kim 1998-08-18
5793058 Multi-gate offset source and drain field effect transistors and methods of operating same Byung-Hyuk Min, Cheol Min Park, Keun-Ho Jang, Jae Hong Jun 1998-08-11
5773852 Shorted anode lateral insulated gate bipolar transistor Byeong-Hoon Lee, Moo-Sup Lim, Yearn-Ik Choi, Jung Eon Park, Won Oh Lee 1998-06-30
5728593 Power insulated-gate transistor having three terminals and a manufacturing method thereof Chong-man Yun, Kwang-Hoon Oh, Deok Joong Kim 1998-03-17
5593909 Method for fabricating a MOS transistor having an offset resistance Byung-Hyuk Min 1997-01-14