CY

Chong-man Yun

FS Fairchild Korea Semiconductor: 10 patents #15 of 311Top 5%
Samsung: 4 patents #25,854 of 75,807Top 35%
📍 Seoul, KR: #3,924 of 39,741 inventorsTop 10%
Overall (All Time): #324,167 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
8716085 Method of fabricating high-voltage semiconductor device Jae Gil LEE, Chang-Wook Kim, Ho-cheol Jang 2014-05-06
8269304 MOS gate power semiconductor device with anode of protection diode connected to collector electrode Kwang-Hoon Oh, Byoung-Ho Choo, Soo-seong Kim 2012-09-18
8084815 Superjunction semiconductor device Jae Gil LEE, Jin Young Jung, Ho-cheol Jang 2011-12-27
7868384 High-voltage semiconductor device and method of fabricating the same Jae Gil LEE, Chang-Wook Kim, Ho-cheol Jang 2011-01-11
7645659 Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same Kwang-Hoon Oh, Kyu-Hyun Lee, Young-chull Kim 2010-01-12
7276405 Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same Young Chul Choi, Tae Hoon Kim, Ho-cheol Jang 2007-10-02
6930356 Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same Young Chul Choi, Tae Hoon Kim, Ho-cheol Jang 2005-08-16
6664595 Power MOSFET having low on-resistance and high ruggedness Tae Hoon Kim 2003-12-16
6518624 Trench-gate power semiconductor device preventing latch-up and method for fabricating the same Hyun-Chul Kim, Kyu-Hyun Lee, Ju-Il Kim 2003-02-11
6448588 Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode Soo-seong Kim, Young Dae Kwon 2002-09-10
6433386 Sense FET having a selectable sense current ratio and method of manufacturing the same Ki Hyun Lee, Kwang Yeon Jun 2002-08-13
6348716 Horizontal MOS gate type semiconductor device including zener diode and manufacturing method thereof 2002-02-19
6344676 Power semiconductor device having low on-resistance and high breakdown voltage Tae Hoon Kim, Ho-cheol Jang, Young-chull Choi 2002-02-05
5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Min-Koo Han, Yearn-Ik Choi 1999-04-06
5728593 Power insulated-gate transistor having three terminals and a manufacturing method thereof Min-Koo Han, Kwang-Hoon Oh, Deok Joong Kim 1998-03-17