Issued Patents All Time
Showing 26–35 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7569430 | Phase changeable structure and method of forming the same | Hideki Horii, Ji-Hye Yi, Young-Soo Lim | 2009-08-04 |
| 7558100 | Phase change memory devices including memory cells having different phase change materials and related methods and systems | Dong-Ho Ahn, Hideki Horii | 2009-07-07 |
| 7541199 | Methods of forming magnetic memory devices including oxidizing and etching magnetic layers | Jong-bong Park | 2009-06-02 |
| 7425735 | Multi-layer phase-changeable memory devices | Jeong-Hee Park, Ju-Chul Park, Bong-Jin Kuh, Yong-Ho Ha | 2008-09-16 |
| 7378698 | Magnetic tunnel junction and memory device including the same | Young-Ki Ha, Jang-Eun Lee, Hyun-Jo Kim, In-Gyu Baek, Se-Chung Oh | 2008-05-27 |
| 7372090 | Magnetic random access memory device and method of forming the same | Se-Chung Oh, Jang-Eun Lee, Hyun-Jo Kim, Kyung-Tae Nam, Young-Ki Ha | 2008-05-13 |
| 7352021 | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier | Jang-Eun Lee, Hyun-Jo Kim, In-Gyu Baek, Young-Ki Ha | 2008-04-01 |
| 7351594 | Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier | Jang-Eun Lee, Hyun-Jo Kim, In-Gyu Baek, Young-Ki Ha | 2008-04-01 |
| 7218556 | Method of writing to MRAM devices | Hyun-Jo Kim, Jang-Eun Lee, Se-Chung Oh, Young-Ki Ha, Kyung-Tae Nam | 2007-05-15 |
| 7141438 | Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same | Young-Ki Ha, Jang-Eun Lee, Hyun-Jo Kim, Se-Chung Oh, In-Gyu Baek | 2006-11-28 |