Jongseon Ahn — 9 Patents at Samsung

Jongseon Ahn has been granted 9 US patents while listed as an inventor at Samsung. The first was granted in 2017 and the most recent in October 2023. Jongseon Ahn ranks #535,341 of 4,157,543 US inventors in our database (top 12.9%). Patent records list Jongseon Ahn in Yongin-si, KR.

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Showing 1–9 of 9 patents

Patent #	Title	Co-Inventors	Date
11792994	Three-dimensional memory device including a string selection line gate electrode having a silicide layer	Kohji Kanamori, Seogoo Kang, Jeehoon Han	2023-10-17
11616078	Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer	Jaeryong Sim, Giyong Chung, Jeehoon Han	2023-03-28
11563023	Semiconductor device with reduced vertical height	Youngjin Kwon, Jeehoon Han	2023-01-24
11515322	Semiconductor devices	Seogoo Kang, Daehyun Jang, Jaeryong Sim, Jeehoon Han	2022-11-29
11450610	Vertical semiconductor devices	Seung-Hoon Hyun, Dongug Ko, Joohee PARK, Juhak Song, SungWon Cho	2022-09-20
11404434	Three-dimensional semiconductor memory device	Jaeryong Sim, Jeehoon Han	2022-08-02
11374017	Three-dimensional memory device including a string selection line gate electrode having a silicide layer	Kohji Kanamori, Seogoo Kang, Jeehoon Han	2022-06-28
11114461	Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer	Jaeryong Sim, Giyong Chung, Jeehoon Han	2021-09-07
9799551	Method of manufacturing semiconductor device	—	2017-10-24

Jongseon Ahn — 9 Patents

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