Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

US Patent 11374017 · Granted Jun 28, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical memory devices and methods of manufacturing the same2025
Semiconductor device and electronic system2025
Semiconductor device and data storage system including the same2025
Memory device with vertically stacked semiconductor structures2025
Three-dimensional semiconductor memory device and electronic system including th2025
Three-dimensional semiconductor memory device and electronic system including th2025
Three-dimensional semiconductor memory device and electronic system including th2025
Three-dimensional semiconductor memory device and electronic system including th2025
Semiconductor devices and data storage systems including the same2025
Semiconductor memory device and method of fabricating the same2025
Semiconductor device and data storage system including the same2025
Semiconductor device and data storage system including the same2025