IB

In-Gyu Baek

Samsung: 64 patents #1,166 of 75,807Top 2%
PF Postech Academy-Industry Foundation: 1 patents #529 of 1,477Top 40%
SF Seoul National University R&Db Foundation: 1 patents #847 of 2,771Top 35%
📍 Seoul, KR: #585 of 39,741 inventorsTop 2%
Overall (All Time): #34,717 of 4,157,543Top 1%
64
Patents All Time

Issued Patents All Time

Showing 51–64 of 64 patents

Patent #TitleCo-InventorsDate
7791923 Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element Dong Chul Kim, Jang-Eun Lee, Myoung-jae Lee, Sun-ae Seo, Hyeong Jun Kim +2 more 2010-09-07
7741669 Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same Moon-Sook Lee 2010-06-22
7672155 Resistive memory devices including selected reference memory cells Hyun-Jo Kim, Kyung-Tae Nam, Se-Chung Oh, Jang-Eun Lee, Jun-Ho Jeong 2010-03-02
7639521 Resistive memory cells and devices having asymmetrical contacts Moon-Sook Lee, Dong Chul Kim 2009-12-29
7535035 Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same Moon-Sook Lee 2009-05-19
7495984 Resistive memory devices including selected reference memory cells Hyun-Jo Kim, Kyung-Tae Nam, Se-Chung Oh, Jang-Eun Lee, Jun-Ho Jeong 2009-02-24
7480174 Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated Moon-Sook Lee 2009-01-20
7446333 Nonvolatile memory devices and methods of manufacturing the same Dong Chul Kim, Young-Kwan Cha, Moon-Sook Lee, Sang Jin Park 2008-11-04
7420198 Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same Moon-Sook Lee 2008-09-02
7378698 Magnetic tunnel junction and memory device including the same Young-Ki Ha, Jang-Eun Lee, Hyun-Jo Kim, Jun-Soo Bae, Se-Chung Oh 2008-05-27
7352021 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Jun-Soo Bae, Jang-Eun Lee, Hyun-Jo Kim, Young-Ki Ha 2008-04-01
7351594 Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Jun-Soo Bae, Jang-Eun Lee, Hyun-Jo Kim, Young-Ki Ha 2008-04-01
7292469 Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated Moon-Sook Lee 2007-11-06
7141438 Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same Young-Ki Ha, Jang-Eun Lee, Hyun-Jo Kim, Se-Chung Oh, Jun-Soo Bae 2006-11-28