HS

Hyeoung-Won Seo

Samsung: 45 patents #2,213 of 75,807Top 3%
Overall (All Time): #64,764 of 4,157,543Top 2%
45
Patents All Time

Issued Patents All Time

Showing 26–45 of 45 patents

Patent #TitleCo-InventorsDate
7659597 Integrated circuit wire patterns including integral plug portions Seong-Goo Kim, Yun-Gi Kim, Jae-Man Yoon 2010-02-09
7619281 Semiconductor device having buried gate line and method of fabricating the same Young-Woong Son, Kang Yoon Lee, Bong-Soo Kim 2009-11-17
7586149 Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same Jae-Man Yoon, Dong-Gun Park, Kang Yoon Lee, Choong-Ho Lee, Bong-Soo Kim +2 more 2009-09-08
7557410 Dynamic random access memory device Jin Woo Lee, Cheol-Ju Yun 2009-07-07
7534708 Recessed-type field effect transistor with reduced body effect Dong Hyun Kim, Du-Heon Song, Sang Hyun Lee, Dae-Joong Won 2009-05-19
7524733 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Nak-Jin Son, Du-Heon Song, Jun Seo 2009-04-28
7491603 Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same Du-Heon Song, Sang Hyun Lee 2009-02-17
7482222 Semiconductor device and method of manufacturing the same Jin Woo Lee, Cheol-Ju Yun 2009-01-27
7429505 Method of fabricating fin field effect transistor using isotropic etching technique Woun-Suck Yang, Du-Heon Song, Jae-Man Yoon 2008-09-30
7393769 Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same Ki-Nam Kim, Woun-Suck Yang, Du-Heon Song 2008-07-01
7387931 Semiconductor memory device with vertical channel transistor and method of fabricating the same Jae-Man Yoon, Kang Yoon Lee, Dong-Gun Park, Bong-Soo Kim, Seong-Goo Kim 2008-06-17
7378320 Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gate Dong Hyun Kim, Du-Heon Song, Sang Hyun Lee 2008-05-27
7368352 Semiconductor devices having transistors with vertical channels and method of fabricating the same Bong-Soo Kim, Jae-Man Yoon, Seong-Goo Kim, Dong-Gun Park, Kang Yoon Lee 2008-05-06
7354827 Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same Du-Heon Song, Sun-joon Kim, Jin Woo Lee 2008-04-08
7300845 Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure Du-Heon Song, Dae-Joong Won, Sang Hyun Lee 2007-11-27
7279774 Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench Woun-Suck Yang, Du-Heon Song, Jae-Man Youn 2007-10-09
7279775 Semiconductor die with protective layer and related method of processing a semiconductor wafer Sun-joon Kim 2007-10-09
7247541 Method of manufacturing a semiconductor memory device including a transistor Jin Woo Lee, Cheol-Ju Yun 2007-07-24
7221023 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Nak-Jin Son, Du-Heon Song, Jun Seo 2007-05-22
7153733 Method of fabricating fin field effect transistor using isotropic etching technique Woun-Suck Yang, Du-Heon Song, Jae-Man Yoon 2006-12-26