HH

Hideki Horii

Samsung: 51 patents #1,787 of 75,807Top 3%
OV Ovonyx: 1 patents #64 of 96Top 70%
📍 Seoul, KR: #822 of 39,741 inventorsTop 3%
Overall (All Time): #52,609 of 4,157,543Top 2%
51
Patents All Time

Issued Patents All Time

Showing 26–50 of 51 patents

Patent #TitleCo-InventorsDate
7800095 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Hyeong-Geun An, Jong-Chan Shin, Dong-Ho Ahn, Jun-Soo Bae 2010-09-21
7787278 Resistance variable memory device and operating method thereof Jun-Soo Bae, Mi-Lim Park 2010-08-31
7778066 Resistance variable memory device and programming method thereof Jun-Soo Bae 2010-08-17
7777212 Phase change memory devices including carbon-containing adhesive pattern Hyeong-Geun An, Min-Young Park, Shin-Hye Kim 2010-08-17
7767568 Phase change memory device and method of fabricating the same Hyeong-Geun An, Jong-Chan Shin, Dong-Ho Ahn, Jun-Soo Bae, Jeong-Hee Park 2010-08-03
7767491 Methods of manufacturing semiconductor device Jeonghee Park, Youngkuk Kim 2010-08-03
7763878 Phase changeable memory device structures Suk-Ho Joo, Ji-Hye Yi 2010-07-27
7638787 Phase changeable memory cell array region and method of forming the same Hyeong-Geun An, Sang-Yeol Kang 2009-12-29
7638788 Phase change memory device and method of forming the same Dong-Ho Ahn, Jong-Chan Shin, Jun-Soo Bae, Hyeong-Geun An 2009-12-29
7605087 Methods of forming semiconductor devices using di-block polymer layers 2009-10-20
7575776 Reflowing of a phase changeable memory element to close voids therein 2009-08-18
7569430 Phase changeable structure and method of forming the same Jun-Soo Bae, Ji-Hye Yi, Young-Soo Lim 2009-08-04
7558100 Phase change memory devices including memory cells having different phase change materials and related methods and systems Dong-Ho Ahn, Jun-Soo Bae 2009-07-07
7498064 Laser reflowing of phase changeable memory element to close a void therein 2009-03-03
7495456 System and method of determining pulse properties of semiconductor device Yong-Ho Ha 2009-02-24
7397092 Phase changable memory device structures Suk-Ho Joo, Ji-Hye Yi 2008-07-08
7247897 Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured Won-bong Choi, Eun-ju Bae 2007-07-24
7060543 Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method Won-bong Choi, Eun-ju Bae 2006-06-13
7037762 Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same Jae Hyun Joo 2006-05-02
7038261 Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention 2006-05-02
7037749 Methods for forming phase changeable memory devices Suk-Ho Joo, Ji-Hye Yi 2006-05-02
6630387 Method for forming capacitor of semiconductor memory device using electroplating method 2003-10-07
6596149 Manufacturing method for capacitor having electrode formed by electroplating 2003-07-22
6255187 Method of fabricating self-aligning stacked capacitor using electroplating method 2001-07-03
6177284 Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof Cheol Seong Hwang 2001-01-23