GK

Gwan-Hyeob Koh

Samsung: 69 patents #1,009 of 75,807Top 2%
SF Seoul National University R&Db Foundation: 1 patents #847 of 2,771Top 35%
📍 Seoul, KR: #523 of 39,741 inventorsTop 2%
Overall (All Time): #30,136 of 4,157,543Top 1%
69
Patents All Time

Issued Patents All Time

Showing 51–69 of 69 patents

Patent #TitleCo-InventorsDate
9716129 Memory device and electronic apparatus including the same Kyu-Rie Sim, Dae-Hwan Kang 2017-07-25
9691459 Semiconductor memory device including shorted variable resistor element of memory cell Bo-Young Seo, Suk-Soo Pyo, Yong-Kyu Lee, Dae-Shik Kim 2017-06-27
8451656 Multi-level memory devices and methods of operating the same Dae Won Ha 2013-05-28
8213223 Multi-level memory devices and methods of operating the same Dae Won Ha 2012-07-03
8036018 Non-volatile memory devices including stacked NAND-type resistive memory cell strings Dae Won Ha 2011-10-11
8026543 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Yoon-Jong Song, Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Choong-Man Lee +10 more 2011-09-27
7843718 Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same Dae Won Ha 2010-11-30
7482616 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Yoon-Jong Song, Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Choong-Man Lee +10 more 2009-01-27
7465675 Method of forming a phase change memory device having a small area of contact 2008-12-16
7411208 Phase-change memory device having a barrier layer and manufacturing method Young-Nam Hwang, Su-Jin Ahn, Sung-Lae Cho, Se-Ho Lee, Kyung-Chang Ryoo +3 more 2008-08-12
7112492 Methods of fabricating semiconductor devices with scalable two transistor memory cells Su-Jin Ahn, Hyoung Joon Kim 2006-09-26
6903409 Semiconductor devices with scalable two transistor memory cells Su-Jin Ahn, Hyoung Joon Kim 2005-06-07
6870268 Integrated circuit devices formed through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region Jae-Goo Lee 2005-03-22
6753227 Method of fabricating MOS transistors Chang-Hyun Cho, Ki-Nam Kim 2004-06-22
6649490 METHODS FOR FORMING INTEGRATED CIRCUIT DEVICES THROUGH SELECTIVE ETCHING OF AN INSULATION LAYER TO INCREASE THE SELF-ALIGNED CONTACT AREA ADJACENT A SEMICONDUCTOR REGION AND INTEGRATED CIRCUIT DEVICES FORMED THEREBY Jae-Goo Lee 2003-11-18
6458680 Method of fabricating contact pads of a semiconductor device Tae-Young Chung, Jae-Goo Lee 2002-10-01
6355547 Method of forming a self-aligned contact pad for a semiconductor device Jae-Goo Lee, Chang-Hyun Cho 2002-03-12
6337282 Method for forming a dielectric layer Ju-Wan Kim, Byung Keun Hwang, Sung Jin Kim, Jue-Goo Lee, Chang-Hyun Cho 2002-01-08
6335233 Method for fabricating MOS transistor Chang-Hyun Cho, Mi-Hyang Lee, Dae Won Ha 2002-01-01